搜索到477篇“ ALGAN/ALN/GAN“的相关文章
高Al组分AlGaN/AlN/GaN量子级联结构的MOCVD外延研究
2024年
阐述高Al组分差的GaN/AlN/AlGaN量子级联紫外-红外双色探测结构的设计,并用MOCVD外延实现过程。通过MOCVD监控分析GaN/AlN/AlGaN量子级联结构生长状况,发现外延AlGaN层的整体Al组分偏低。随后用SEM观测样品表面形貌存在凸起,从截面测量各个结构厚度符合设计,用Cary7000分光光度计测试得到279nm以及1 700~1 900nm双色吸收峰。
吴粤川邓文娟
关键词:量子级联
2D study of AlGaN/AlN/GaN/AlGaN HEMTs' response to traps被引量:2
2019年
In this work, the effects of GaN channel traps and temperature on the performance of AlGaN/AlN/GaN/AlGaN high electron mobility transistors(HEMTs) on Si(111) substrate, were investigated. 2 D simulations carried out using the Silvaco TCAD simulator tool for different drain and gate voltages showed that acceptor-like traps in the channel have a significant influence on the DC and RF characteristics. It was found that deeper acceptors below the conduction band with larger concentration have a more pronounced effect on the transistor performance. Meanwhile, the donor-like traps show no influence. Pulsing the device with different pulse widths and bias conditions, as well as increasing temperature, showed that the traps are more ionized when the pulse is wider or the temperature is higher, which can degrade the drain current and thus the DC characteristics of the transistor. Passivation of the transistor has also a beneficial effect on performance.
A.HezabraN.A.AbdeslamN.SengougaM.C.E.Yagoub
关键词:ALGANHEMTALGAN/ALN/GANSUBSTRATETRAPPINGTRAPS
Parasitic source resistance at different temperatures for AlGaN/AlN/GaN heterostructure field-effect transistors
2017年
The parasitic source resistance(RS) of AlGaN/AlN/GaN heterostructure field-effect transistors(HFETs) is studied in the temperature range 300–500 K. By using the measured RSand both capacitance–voltage(C–V) and current–voltage(I–V) characteristics for the fabricated device at 300, 350, 400, 450, and 500 K, it is found that the polarization Coulomb field(PCF) scattering exhibits a significant impact on RSat the above-mentioned different temperatures. Furthermore, in the AlGaN/AlN/GaN HFETs, the interaction between the additional positive polarization charges underneath the gate contact and the additional negative polarization charges near the source Ohmic contact, which is related to the PCF scattering, is verified during the variable-temperature study of RS.
刘艳林兆军吕元杰崔鹏付晨韩瑞龙霍宇杨铭
AlGaN/AlN/GaN异质结场效应晶体管中极化库仑场散射制变温研究
信息化已成为当今社会发展的大趋势,微电子技术在推进社会信息化进程中起了很大作用。而半导体器件性能的提高直接影响了微电子技术的发展。半导体器件在以高效率、小型化等为发展目标不断追求技术进步的同时,也越来越注重追求低污染、低...
刘艳
关键词:变温
文献传递
AlGaN/AlN/GaN异质结场效应晶体管中极化库仑场散射机制变温研究
信息化已成为当今社会发展的大趋势,微电子技术在推进社会信息化进程中起了很大作用。而半导体器件性能的提高直接影响了微电子技术的发展。半导体器件在以高效率、小型化等为发展目标不断追求技术进步的同时,也越来越注重追求低污染、低...
刘艳
关键词:异质结场效应晶体管散射机制
文献传递
Comparison of GaN/AlGaN/AlN/GaN HEMTs Grown on Sapphire with Fe-Modulation-Doped and Unintentionally Doped GaN Buffer:Material Growth and Device Fabrication被引量:1
2016年
AlGaN/GaN high electron mobility transistors (HEMTs) grown on Fe-modulation-doped (MD) and unintentionally doped (UID) GaN buffer layers are investigated and compared. Highly resistive GaN buffers (10^9Ω·cm) are induced by individual mechanisms for the electron traps' formation: the Fe MD buffer (sample A) and the UID buffer with high density of edge-type dislocations (7.24×10^9cm^-2, sample B). The 300K Hall test indicates that the mobility of sample A with Fe doping (2503cm^2V^-1s^-1) is much higher than sample B (1926cm^2V^-1s^-1) due to the decreased scattering effect on the two-dimensional electron gas. HEMT devices are fabricated on the two samples and pulsed I–V measurements are conducted. Device A shows better gate pinch-off characteristics and a higher threshold voltage (-2.63V) compared with device B (-3.71V). Lower gate leakage current |IGS| of device A (3.32×10^-7A) is present compared with that of device B (8.29×10^-7A). When the off-state quiescent points Q_2 (V GQ2=-8V, V DQ2=0V) are on, V th hardly shifts for device A while device B shows +0.21V positive threshold voltage shift, resulting from the existence of electron traps associated with the dislocations in the UID-GaN buffer layer under the gate. Under pulsed I–V and transconductance G m–V GS measurement, the device with the Fe MD-doped buffer shows more potential in improving reliability upon off-state stress.
巩稼民王权闫俊达刘峰奇冯春王晓亮王占国
关键词:GAN
Observation of a Current Plateau in the Transfer Characteristics of InGaN/AlGaN/AlN/GaN Heterojunction Field Effect Transistors
2015年
Direct-current transfer characteristics of (InGaN)/A1GaN/A1N/GaN heterojunction field effect transistors (HFETs) are presented. A drain current plateau (IDs = 32.0 mA/mm) for Vcs swept from +0.7 V to -0. 6 V is present in the transfer characteristics of InGaN/AIGaN/AIN/GaN HFETs. The theoretical calculation shows the coexistence of two-dimensional electron gas (2DEG) and two-dimensional hole gas (2DHG) in InGaN/AIGaN/A1N/GaN heterostructures, and the screening effect of 2DHG to the 2DEG in the conduction channel can explain this current plateau. Moreover, the current plateau shows the time-dependent behavior when IDs Vcs scans repeated are conducted. The obtained insight provides indication for the design in the fabrication of GaN-based super HFETs.
闫俊达王权王晓亮肖红领姜丽娟殷海波冯春王翠梅渠慎奇巩稼民张博李百泉王占国侯洵
关键词:INGAN
Improvement of switching characteristics by substrate bias in AlGaN/AlN/GaN heterostructure field effect transistors
2015年
A simple and effective approach to improve the switching characteristics of AlGaN/AlN/GaN heterostructure field effect transistors (HFETs) by applying a voltage bias on the substrate is presented. With the increase of the substrate bias, the OFF-state drain current is much reduced and the ON-state current keeps constant. Both the ON/OFF current ratio and the subthreshold swing are demonstrated to be greatly improved. With the thinned substrate, the improvement of the switching characteristics with the substrate bias is found to be even greater. The above improvements of the switching characteristics are attributed to the interaction between the substrate bias induced electrical field and the bulk traps in the GaN buffer layer, which reduces the conductivity of the GaN buffer layer.
杨铭林兆军赵景涛王玉堂李志远吕元杰冯志红
Influence of the AlGaN barrier thickness on polarization Coulomb field scattering in an AlGaN/AlN/GaN heterostructure field-effect transistor
2015年
In this study rectangular AlGaN/AlN/GaN heterostructure field-effect transistors(HFETs) with 22-nm and 12-nm AlGaN barrier layers are fabricated, respectively. Using the measured capacitance–voltage and current–voltage characteristics of the prepared devices with different Schottky areas, it is found that after processing the device, the polarization Coulomb field(PCF) scattering is induced and has an important influence on the two-dimensional electron gas electron mobility.Moreover, the influence of PCF scattering on the electron mobility is enhanced by reducing the AlGaN barrier thickness.This leads to the quite different variation of the electron mobility with gate bias when compared with the AlGaN barrier thickness. This mainly happens because the thinner AlGaN barrier layer suffers from a much stronger electrical field when applying a gate bias, which gives rise to a stronger converse piezoelectric effect.
吕元杰冯志红顾国栋尹甲运房玉龙王元刚谭鑫周幸叶林兆军冀子武蔡树军
关键词:ALGAN/ALN/GAN
Growth condition optimization and mobility enhancement through prolonging the GaN nuclei coalescence process of AlGaN/AlN/GaN structure
2015年
AlGaN/AlN/GaN structures are grown by metalorganic vapor phase epitaxy on sapphire substrates. Influences of AlN interlayer thickness, AlGaN barrier thickness, and Al composition on the two-dimensional electron gas(2DEG) performance are investigated. Lowering the V/III ratio and enhancing the reactor pressure at the initial stage of the hightemperature GaN layer growth will prolong the GaN nuclei coalescence process and effectively improve the crystalline quality and the interface morphology, diminishing the interface roughness scattering and improving 2DEG mobility. AlGaN/AlN/GaN structure with 2DEG sheet density of 1.19 × 10^13cm^-2, electron mobility of 2101 cm^2·V^-1·s^-1, and square resistance of 249 Ω is obtained.
何晓光赵德刚江德生朱建军陈平刘宗顺乐伶聪杨静李晓静张书明杨辉
关键词:GAN

相关作者

栾崇彪
作品数:13被引量:0H指数:0
供职机构:山东大学
研究主题:极化 库仑场 散射 ALGAN/ALN/GAN 异质结场效应晶体管
王晓亮
作品数:286被引量:149H指数:6
供职机构:中国科学院半导体研究所
研究主题:氮化镓 GAN 铝镓氮 高电子迁移率晶体管 分子束外延
肖红领
作品数:153被引量:26H指数:3
供职机构:中国科学院半导体研究所
研究主题:氮化镓 铝镓氮 成核 迁移率 高电子迁移率晶体管
王翠梅
作品数:102被引量:20H指数:3
供职机构:中国科学院半导体研究所
研究主题:氮化镓 铝镓氮 高电子迁移率晶体管 迁移率 势垒
李建平
作品数:79被引量:72H指数:5
供职机构:中国科学院半导体研究所
研究主题:氮化镓 MOCVD GSMBE生长 GSMBE 碳化硅衬底