A 0. 1μm SOI grooved gate pMOSFET with 5.6nm gate oxide is fabricated and demonstrated. The groove depth is 180nm. The transfer characteristics and the output characteristics are shown. At Vds = -1. 5V,the drain saturation current is 380μA and the off-state leakage current is 1.9nA;the sub-threshold slope is 115mV/dec at Vds = -0. 1V and DIBL factor is 70. 7mV/V. The electrical characteristic comparison between the 0.1μm SOI groovedgate pMOSFET and the 0. 1μm bulk grooved gate one with the same process demonstrates that a 0. 1μm SOI grooved gate pMOSFET has better characteristics in current-driving capability and sub-threshold slope.
Partial-depleted SOI(silicon on insulator) nMOS devices are fabricated with and without silicide technology,respectively.Off-state breakdown characteristics of these devices are presented with and without body contact,respectively.By means of two-dimension(2D) device simulation and measuring junction breakdown of the drain and the body,the difference and limitation of the breakdown characteristics of devices with two technologies are analyzed and explained in details.Based on this,a method is proposed to improve off-state breakdown characteristics of PDSOI nMOS devices.
