A combined conduction and radiation heat transfer model was used to simulate the heat transfer within wafer and investigate the effect of thermal transport properties on temperature non-uniformity within wafer surface. It is found that the increased conductivities in both doped and undoped regions help reduce the temperature difference across the wafer surface. However, the doped layer conductivity has little effect on the overall temperature distribution and difference. The temperature level and difference on the top surface drop suddenly when absorption coefficient changes from 104 to 103 m-1. When the absorption coefficient is less or equal to 103 m-1, the temperature level and difference do not change much. The emissivity has the dominant effect on the top surface temperature level and difference. Higher surface emissivity can easily increase the temperature level of the wafer surface. After using the improved property data, the overall temperature level reduces by about 200 K from the basis case. The results will help improve the current understanding of the energy transport in the rapid thermal processing and the wafer temperature monitor and control level.
Mid-infrared transmittance of submicron silver slit arrays was numerically studied with the finite difference time domain method. The slit width varies from 50 nm to 300 nm and a square feature may attach at either or both slit sides. Although the side length of features is one or two orders of magnitude shorter than the wavelength, the attached nanoscale features can modify the transmittance significantly. The transmittance was also further investigated in detail by looking into the electromagnetic fields and Poynting vectors of selected slit geometries. The investigation results show that such change can be attributed to the cavity resonance effect inside the slit arrays. The work is of great importance to the wavelength-selective devices design in optical devices and thermal application fields.
