Interfacial barrier is a key factor that determines the performances of heterojunctions.In this work,we study the effect of manganite film thickness on the effective interfacial barrier for La 0.67 Sr 0.33 MnO 3 /Nb:SrTiO 3 junctions.The barrier is extracted from the forward current-voltage characteristics.Our results demonstrate that the barrier decreases gradually from ～0.85 eV to ～0.60 eV when the film thickness decreases from 150 nm to 2 nm.The overall value of the barrier is only about 50% of the corresponding one determined from the photovoltaic effect.
According to density functional theory (DFT) using the plane wave base and pseudo-potential, we investigate the effects of the specific location of oxygen vacancy (VO) in a (Ti,Co)O 6 distorted octahedron on the spin density and magnetic properties of Co-doped rutile TiO2 dilute magnetic semiconductors. Our calculations suggest that the V O location has a significant influence on the magnetic moment of individual Co cations. In the case where two Co atoms are separated far away from each other, when the V O is located at the equatorial site of a Co-contained octahedron, the ground state of the two Co cations is d6 (t3 2g ↑, t 3 2g ↓) without any magnetic moment. However, if the V O is located at the apical site, these two Co sites have different ground states and magnetic moments. The spin densities are also observed to be modified by the exchange coupling between the Co cations and the location of V O . Some positive spin polarization is induced around the adjacent O ions.
