In this paper,a WO 3-based resistive random access memory device composed of a thin film of WO 3 sandwiched between a copper top and a platinum bottom electrodes is fabricated by electron beam evaporation at room temperature.The reproducible resistive switching,low power consumption,multilevel storage possibility,and good data retention characteristics demonstrate that the Cu/WO 3 /Pt memory device is very promising for future nonvolatile memory applications.The formation and rupture of localised conductive filaments is suggested to be responsible for the observed resistive switching behaviours.
