为解决锗(Ge)基硫系玻璃光纤损耗相对较高等问题,采用物理和化学除杂相结合的工艺,制备出了高纯Ge28Sb12Se60硫系玻璃,显著降低了红外波段C、H、O杂质吸收。应用真空高速旋转法,制备出了壁厚均匀、光学质量优异的Ge28Sb12Se58S2硫系玻璃皮管。采用棒管法拉制出外径50±1.5μm、具有芯包结构的Ge-Sb-Se硫系玻璃光纤,光纤弯曲半径为5 mm,红外波段吸收基线为2.2 d B/m(2.87μm和4.5μm处除外)。
In this work, the fabrication and optical properties of a planar waveguide in a neodymium-doped calcium niobium gallium garnet （Nd：CNGG） crystal are reported. The waveguide is produced by proton （H＋） implantation at 480 keV and a fluence of 1.0x 10^17 ions/cm2. The prism-coupling measurement is performed to obtain the dark mode of the waveguide at a wavelength of 632.8 nm. The reflectivity calculation method （RCM） is used to reconstruct the refractive index profile. The finite-difference beam propagation method （FD-BPM） is employed to calculate the guided mode profile of the waveguide. The stopping and range of ions in matter 2010 （SRIM 2010） code is used to simulate the damage profile induced by the ion implantation. The experimental and theoretical results indicate that the waveguide can confine the light propagation.
A Nd：CLNGG waveguide structure operated at wavelengths of both 632.8 nm and 1539 nm was demonstrated for the first time to our knowledge, which was produced by the 480-keV H＋ ion implantation with a dose of 1.0× 10^17 protons/cm2, Its propagating modes at 632.8 nm and 1539 nm were measured by the well-known prism coupling technique. The refractive index profile at either 632.8-nm wavelength or 1539-nm wavelength was optical barrier type in the proton-implanted Nd：CLNGG crystal optical waveguide, which was calculated by using the reflectivity calculation method. The near-field light intensity distributions were also simulated by the finite-difference beam propagation method in the visible and nearinfrared bands.
采用反复蒸馏提纯技术和开放式动态蒸馏相结合的工艺,制备了高纯As-S玻璃,基本消除了玻璃在2.9、4和6.3μm处的杂质吸收。利用旋转法制备出壁厚均匀、表面质量优异的硫系玻璃套管。采用棒管法拉制出丝径50μm,芯径40μm具有芯包结构的硫系玻璃光纤。拉制的As-S光纤机械性能和光学性能优异,光纤丝径波动小于1%,弯曲半径优于4 mm,中红外波段损耗基线小于0.5 d B/m。制备出像元呈正方形排列,出端规格64×9,入端规格192×3,用于线–面转换的红外传像束,像束断丝率为2.7%。利用该异型传像束成功实现了长线阵的红外推扫成像。
