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国家高技术研究发展计划(2009AA03Z405)

作品数:19 被引量:13H指数:2
相关作者:刘玉敏俞重远冯昊芦鹏飞赵伟更多>>
相关机构:北京邮电大学更多>>
发文基金:国家高技术研究发展计划国家自然科学基金国家重点基础研究发展计划更多>>
相关领域:理学电子电信一般工业技术机械工程更多>>

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19 条 记 录,以下是 1-10
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Strain distributions and electronic structure of three-dimensional InAs/GaAs quantum rings
2009年
This paper presents a finite element calculation for the electronic structure and strain distribution of self-organized InAs/GaAs quantum rings. The strain distribution calculations are based on the continuum elastic theory. An ideal three-dimensional circular quantum ring model is adopted in this work. The electron and heavy-hole energy levels of the InAs/GaAs quantum rings are calculated by solving the three-dimensional effective mass SchrSdinger equation including the deformation potential and piezoelectric potential up to the second order induced by the strain. The calculated results show the importance of strain and piezoelectric effects, and these effects should be taken into consideration in analysis of the optoelectronic characteristics of strain quantum rings.
刘玉敏俞重远贾博雍徐子欢姚文杰陈智辉芦鹏飞韩利红
基于双吸收结构的谐振腔增强型光探测器
为了实现对传统谐振腔增强型(RCE)光探测器的优化,本文提出了一种具有双吸收结构的RCE光探测器,并从理论上分析了该光探测器的量子效率和高速响应特性,进而将其与传统的RCE光探测器进行了比较。结果表明,双吸收结构RCE光...
王伟黄永清段晓峰蔡世伟郭经纬黄辉任晓敏
关键词:光电子学量子效率
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Optimizing the top profile of a nanowire for maximum forward emission
2011年
The optimal top structure of a nanowire quantum emitter single photon source is significant in improving performance. Based on the axial symmetry of a cylindrical nanowire, this paper optimizes the top profile of a nanowire for the maximum forward emission by combining the geometry projection method and the finite element method. The results indicate that the nanowire with a cambered top has the stronger emission in the forward direction, which is helpful to improve the photon collection effciency.
王东林俞重远刘玉敏郭晓涛曹贵冯昊
关键词:NANOWIRE
Donor-bound electron states in a two-dimensional quantum ring under uniform magnetic field被引量:1
2011年
The electron states in a two-dimensional GaAs/AlGaAs quantum ring are theoretically studied in effective mass approximation. On-centre donor impurity and uniform magnetic field perpendicular to the ring plane are taken into account. The energy spectrum with different angular momentum changes dramatically with the geometry of the ring. The donor impurity reduces the energies with an almost fixed value; however, the magnetic field alters energies in a more complex way. For example, energy levels under magnetic field will cross each other when increasing the inner radius and outer radius of the ring, leading to the fact that the arrangement of energy levels is distinct in certain geometry of the ring. Moreover, energy levels with negative angular momentum exhibit the non-monotonous dependence on the increasing magnetic field.
贾博雍俞重远刘玉敏韩利红姚文杰冯昊叶寒
Band structure and absorption coefficient in GaN/AlGaN quantum wires
2010年
The band structures of rectangular GaN/AlGaN quantum wires are modeled by using a parabolic effective-mass theory. The absorption coefficients are calculated in a contact-density matrix approach based on the band structure. The results obtained indicate that the peak absorption coefficients augment with the increase of the injected carrier density, and the optical gain caused by interband transition is polarization anisotropic. For the photon energy near 1.55 eV, we can obtain relatively large peak gain. The calculations support the previous results published in the recent literature.
姚文杰俞重远刘玉敏
关键词:GAIN
The equilibrium composition in Ge_xSi_1-_x/Si self-assembled alloy quantum dot
2010年
The equilibrium composition in strained quantum dot is the result of both elastic relaxation and chemical mixing effects, which have a direct relationship to the optical and electronic properties of the quantum-dot-based device. Using the method of moving asymptotes and finite element tools, an efficient technique has been developed to compute the composition profile by minimising the Gibbs free energy in self-assembled alloy quantum dot. In this paper, the composition of dome-shaped CexSi1-x/Si quantum dot is optimized, and the contribution of the different energy to equilibrium composition is discussed. The effect of composition on the critical size for shape transition of pyramid-shaped GeSi quantum dot is also studied.
王东林俞重远刘玉敏叶寒芦鹏飞赵龙郭晓涛
应变补偿层对量子点生长影响的理论研究被引量:3
2010年
量子点的光学特性与量子点的大小均匀性、密度、内部应变以及隔离层的厚度等有密切关系.文中从理论角度定量研究了GaNXAs1-X应变补偿层对InAs/GaAs量子点生长质量的改善作用,分析了应变补偿层对隔离层厚度减小的作用.讨论了应变补偿层的补偿位置和补偿层N组分X对量子点生长时局部应变和体系应变的补偿作用.分析了应变补偿层对体系应变的减少作用,并计算了相邻层量子点的垂直对准概率.研究结果对实验中应变补偿的优化和高质量量子点阵列的生长实现提供了理论依据.
冯昊俞重远刘玉敏芦鹏飞贾博雍姚文杰田宏达赵伟徐子欢
关键词:量子点
The influence of strain-reducing layer on strain distribution and ground state energy levels of GaN/AlN quantum dot
2009年
This article deals with the strain distributions around GaN/AlN quantum dots by using the finite element method. Special attention is paid to the influence of Al0.2Ga0.8N strain-reducing layer on strain distribution and electronic structure. The numerical results show that the horizontal and the vertical strain components are reinforced in the GaN quantum dot due to the presence of the strain-reducing layer, but the hydrostatic strain in the quantum dot is not influenced. According to the deformation potential theory, we study the band edge modifications and the piezoelectric effects. The result demonstrates that with the increase of the strain reducing layer, the transition energy between the ground state electron and the heavy hole increases. This result is consistent with the emission wavelength blue shift phenomenon observed in the experiment and confirms that the wavelength shifts toward the short wavelength range is realizable by adjusting the structure-dependent parameters of GaN/AlN quantum dot.
刘玉敏俞重远任晓敏徐子欢
长波长QD-VCSELs中的应变补偿理论被引量:3
2010年
从理论角度定量地研究了量子点垂直腔表面发射激光器(QD-VCSELs)中GaNAs应变补偿层对InAs/GaAs量子点阵列生长质量的改善作用,得出了不同补偿浓度和补偿位置对补偿效果影响的规律,得到了确定最佳补偿参数的途径.为长波长(1.2~1.6μm)QD-VCSELs中量子点有源区的制备提供了理论指导.
冯昊俞重远刘玉敏
关键词:量子点垂直腔面发射激光器
Strain distribution and electronic structures of the InAs/GaAs quantum ring molecule in an applied electric field
2010年
The strain distribution and electronic structures of the InAs/GaAs quantum ring molecule are calculated via the finite element method.In our model,three identical InAs quantum rings are aligned vertically and embedded in the cubic GaAs barrier.Considering the band edge modification induced by the strain,the electronic ground state and the dependence of ground state energy on geometric parameters of the quantum ring molecule are investigated.The change of localization of the wavefunction resulting from the applied electric field along the growth direction is observed.The ground state energy decreases as the electric field intensity increases in a parabolic-like mode.The electric field changes the monotonic dependence of the energy level on the inter-ring distance into a non-monotonic one.However,the electric field has no effect on the relationships between the energy level and other geometric parameters such as the inner radius and outer radius.
JIA BoYong,YU ZhongYuan,LIU YuMin,YAO WenJie,YE Han & FENG Hao Key Laboratory of Information Photonics and Optical Communications(Beijing University of Posts and Telecommunications),Ministry of Education,Beijing 100876,China
关键词:STRAINQUANTUMRINGMOLECULE
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