Topological insulators （TIs） are a new state of quantum matter with a band gap in bulk and conducting surface states. In this work, the Raman spectra of topological insulator Bi2Te3 films prepared by molecular beam epitaxy （MBE） have been measured by an in situ ultrahigh vacuum （UHV）-MBE-Raman spectroscopy system. When the thickness of Bi2Te3 films decreases from 40 quintuple-layers （QL） to 1 QL, the spectral characteristics of some Raman modes appearing in bulk Bi2Te3 vary and a new vibrational mode appears, which has not been reported in previous studies and might be related to quantum size effects and symmetry breaking. In addition, an obvious change was observed at 3 QL when a Dirac cone formed. These results offer some new information about the novel quantum states of TIs.
Providing the strong spin-orbital interaction, Bismuth is the key element in the family of three-dimensional topological insulators. At the same time, Bismuth itself also has very unusual behavior, existing from the thinnest unit to bulk crystals. Ultrathin Bi （111） bilayers have been theoretically proposed as a two-dimensional topological insulator. The related experimental realization achieved only recently, by growing Bi （111） ultrathin bilayers on topological insulator Bi2Te3 or Bi2Se3 substrates. In this review, we started from the growth mode of Bi （111） bilayers and reviewed our recent progress in the studies of the electronic structures and the one-dimensional topological edge states using scanning tunneling microscopy/spectroscopy （STM/STS）, angle-resolved photoemission spectroscopy （ARPES）, and first principles calculations.
