Growth of SiCGe ternary alloy on 6H-SiC in a conventional hot-wall CVD system was initially studied. SiH4, GeH4 and C3H8 were employed as silicon, germanium and carbon source, respectively, while H2 was employed as the carrier gas. To reduce the heavy lattice mismatch between the film and the substrate, a 3C-SiC buffer layer was inserted between them in a CVD process. Optimizing the growth conditions was discussed. The samples were measured by means of SEM, SAXRD (Small Angle X-Ray Diffraction). It is shown that use of the 3C-SiC buffer layer is an effective way to improve the quality of the ternary alloy.
Tan Changxing Chen Zhiming Pu Hongbin Lu Gang Li Lianbi
The Si on SiC heterojunction is still poorly understood,although it has a number of potential applications in electronic and optoelectronic devices,for example,light-activated SiC power switches where Si may play the role of an light absorbing layer.This paper reports on Si films heteroepitaxially grown on the Si face of (0001) n-type 6H-SiC substrates and the use of B2H6 as a dopant for p-Si grown at temperatures in a range of 700–950 C.X-ray diffraction (XRD) analysis and transmission electron microscopy (TEM) tests have demonstrated that the samples prepared at the temperatures ranged from 850 C to 900 C are characterized as monocrystalline silicon.The rocking XRD curves show a well symmetry with FWHM of 0.4339 Omega.Twin crystals and stacking faults observed in the epitaxial layers might be responsible for widening of the rocking curves.Dependence of the crystal structure and surface topography on growth temperature is discussed based on the experimental results.The energy band structure and rectifying characteristics of the Si/SiC heterojunctions are also preliminarily tested.
