An ultra-wideband （3.1-10.6 GHz） low-noise amplifier using the 0.18μm CMOS process is presented. It employs a wideband filter for impedance matching. The current-reused technique is adopted to lower the power consumption. The noise contributions of the second-order and third-order Chebyshev fliers for input matching are analyzed and compared in detail. The measured power gain is 12.4-14.5 dB within the bandwidth. NF ranged from 4.2 to 5.4 dB in 3.1-10.6 GHz. Good input matching is achieved over the entire bandwidth. The test chip consumes 9 mW （without output buffer for measurement） with a 1.8 V power supply and occupies 0.88 mm^2.
A low-power voltage-mode-logic （VML） transmitter fabricated in TSMC 28 nm CMOS technology is presented. The VML driver outputs a high-swing signal and consumes less power than a current-mode-logic （CML） driver. To further reduce power, the driver is divided into two voltage domains by level shifters. Moreover, the proposed driver topology can achieve mutually decoupled impedance self-calibration and equalization control. The measurement result shows that the transmitter merely dissipates 23 roW/channel while exhibiting an 880 mV differential eye height at 4.488 Gb/s.
A multi-standard compatible transmitter with pre-emphasis for high speed serial links is presented. Based on the comparison between voltage mode（VM） and current mode（CM） output driver architectures,a low power CM output driver with reverse scaling and bias current filtering technique is proposed.A 2-tap pre-emphasis filter is used to reduce the intersymbol interference caused by the low-pass channel,and a high speed,low power combined serializer is implemented to convert 10 bit parallel data into a serial data stream.The whole transmitter is fabricated in 65 nm 1.2 V/2.5 V CMOS technology.It provides an eye height greater than 800 mV for data rates of both 2.5 Gb/s and 5 Gb/s.The output root mean square jitter of the transmitter at 5 Gb/s is only 9.94 ps without pre-emphasis.The transmitter consumes 41.2 mA at 5 Gb/s and occupies only 240×140μm^2.
