您的位置: 专家智库 > >

国家自然科学基金(51175441)

作品数:1 被引量:5H指数:1
发文基金:国家自然科学基金国家重点基础研究发展计划更多>>
相关领域:金属学及工艺更多>>

文献类型

  • 2篇学位论文
  • 1篇期刊文章

领域

  • 2篇电子电信
  • 1篇金属学及工艺

主题

  • 2篇单晶
  • 2篇单晶硅
  • 1篇无损伤
  • 1篇机械化学
  • 1篇复合驱
  • 1篇复合驱动
  • 1篇PROCES...
  • 1篇SIO
  • 1篇DRO
  • 1篇超精
  • 1篇超精密
  • 1篇超精密切削
  • 1篇RUNNIN...
  • 1篇NANOTR...
  • 1篇NANOWE...

机构

  • 2篇西南交通大学

作者

  • 1篇张鹏
  • 1篇肖晨

传媒

  • 1篇Fricti...

年份

  • 1篇2019
  • 1篇2018
  • 1篇2013
1 条 记 录,以下是 1-3
排序方式:
单晶硅表面机械化学能量复合驱动微观去除机理研究
纳米制造是21世纪制造技术竞争的制高点,是衡量国家高科技发展水平和综合实力的关键技术。随着纳米科技的发展,传统的表面加工技术已无法满足实际应用(包括电信、国防、航天、集成电路、光学制造等领域的高端装备)在高表面精度和无加...
肖晨
关键词:单晶硅
文献传递
Running-in process of Si-SiO_(x)/SiO_(2)pair at nanoscale-Sharp drops in friction and wear rate during initial cycles被引量:5
2013年
Using an atomic force microscope,the running-in process of a single crystalline silicon wafer coated with native oxide layer(Si-SiO_(x))against a SiO_(2)microsphere was investigated under various normal loads and displacement amplitudes in ambient air.As the number of sliding cycles increased,both the friction force Ft of the Si-SiO_(x)/SiO_(2)pair and the wear rate of the silicon surface showed sharp drops during the initial 50 cycles and then leveled off in the remaining cycles.The sharp drop in Ft appeared to be induced mainly by the reduction of adhesion-related interfacial force between the Si-SiO_(x)/SiO_(2)pair.During the running-in process,the contact area of the Si-SiO_(x)/SiO_(2)pair might become hydrophobic due to removal of the hydrophilic oxide layer on the silicon surface and the surface change of the SiO_(2)tip,which caused the reduction of friction force and the wear rate of the Si-SiO_(x)/SiO_(2)pair.A phenomenological model is proposed to explain the running-in process of the Si-SiO_(x)/SiO_(2)pair in ambient air.The results may help us understand the mechanism of the running-in process of the Si-SiO_(x)/SiO_(2)pair at nanoscale and reduce wear failure in dynamic microelectromechanical systems(MEMS).
Lei CHENSeong HKIMXiaodong WANGLinmao QIAN
关键词:NANOTRIBOLOGYNANOWEAR
单晶硅表面原子层状去除研究
纳米科技的发展依赖于先进的纳米制造技术。超精密加工技术是纳米科技向微型化、集成化、智能化发展的关键,实现极限精度制造——原子级材料去除——对我国电子通讯、生物医疗、能源储备、国防航天等高科技产业的发展具有重要的现实意义。...
张鹏
关键词:单晶硅超精密切削
文献传递
共1页<1>
聚类工具0