Three isostructural three-dimensional(3D) lanthanide-based metal-organic frameworks [Ln_2L(H_2L)(NMP)_2].H_2O(Ln=Sm(1), Eu(2), Gd(3); H_4L=1,1′:4′,1″-terphenyl-2′,4,4″,5′-tetracarboxylic acid; NMP=N-methyl-2-pyrrolidone) have been synthesized and structurally characterized. In 1–3, two Ln3+ ions are doubly-bridged by two oxygen atoms of two carboxylate groups to form the dinuclear Ln_2(OCOO–)_2 unit. Each Ln_2(OCOO–)_2 unit links with four H_2L^(2-) ligands and four L4. ligands to lead to the 3D framework,which can be rationalized as a new trinodal 4,4,8-connected(44.62)(45.6)(412.616) topological network by considering the dinuclear Ln_2(OCOO–)_2 units as 8-connected nodes and L^4./H_2L^(2-) ligands as planar 4-connected nodes, respectively. 1 and 3 exhibit blue emission originated from the ligand with the emission maximum at 384 nm, while 2 shows intense characteristic red emission of Eu^(3+) ions and weak ligand-centered emission. Moreover, 2 has fluorescent quenching response towards the aromatic nitro compounds, especially for the 3,4-dinitrotoluene(3,4-DNT) with the linear Stern-Volmer relationship in the concentration range of 0–1 mM and the quenching constant(Ksv) of 2.084×10~3 M^(-1).
We develop high efficiency solution-processed pure green organic light-emitting devices using a starburst molecule 7,7′,7″-(5,5,10,10,15,15-hexahexyl-10,15-dihydro-5H-diindeno[1,2-a:1′,2′-c]fluorene-2,7,12-triyl)tris(4-(4-(9H-carbazol-9-yl)phenyl)benzo[c][1,2,5]thiadiazole)(TRcz)doped 2-methyl-9,10-di(2-naphthyl)anthracene(MADN)as the emitting layers.The electroluminescence properties of the devices with different doping concentrations are investigated.With the increasing doping concentration from 0.5wt%to 5wt%,the maximum efficiency changes from 4.8cd/A to 8.4cd/A.Under the optimal concentration of 4wt%,the device shows pure green emission at 516nm with a chromaticity coordinate of(0.30,0.59)as well as a high brightness of 19900cd/m^(2)and a high efficiency of 10.1cd/A,which are better than 11490cd/m^(2)and 4.2cd/A obtained in the undoped device.
