This paper discusses the Ⅰ-Ⅴ property of the GaAs-based resonant tunnelling structure(RTS) under external uniaxial pressure by photoluminescence studies.Compressive pressure parallel to the [110] direction,whose value is determined by Hooke's law,is imposed on the sample by a helix micrometer.With the increase of the applied external uniaxial compressive pressure,the blue shift and splitting of the luminescence peaks were observed,which have some influence on the I-V curve of RTS from the point of view of the energy gap,and the splitting became more apparent with applied pressure.Full width at half maximum broadening could also be observed.
