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国家重点基础研究发展计划(2006CB605102)

作品数:20 被引量:66H指数:3
相关作者:王崇愚于涛陈丽群曹礼群党宏丽更多>>
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20 条 记 录,以下是 1-10
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bcc Fe中刃型位错的结构及能量学研究被引量:16
2006年
基于位错理论,利用分子动力学方法建立了〈100〉{010},〈100〉{011},1/2〈111〉{011}和1/2〈111〉{112}刃型位错的芯结构,并计算了这四种刃型位错的形成能、位错芯能量和芯半径.计算结果表明:〈100〉{010}和〈100〉{011}刃型位错的形成能比1/2〈111〉{011}和1/2〈111〉{112}刃型位错的要高,这表明〈100〉刃型位错比1/2〈111〉刃型位错更难形成.而〈100〉{010}和〈100〉{011}刃型位错的芯半径比1/2〈111〉{011}和1/2〈111〉{112}刃型位错的小,这说明在1/2〈111〉刃型位错中位于奇异区的原子数多于〈100〉刃型位错,而这些原子要比完整晶体中的原子具有更大的活性.可见,1/2〈111〉刃型位错比〈100〉刃型位错更易运动,且〈100〉刃型位错在bccFe中难以形成.
陈丽群王崇愚于涛
关键词:BCCFE刃型位错分子动力学模拟
Atomistic simulation of kink structure on edge dislocation in bcc iron
2008年
Based on the general theory of dislocation and kink, we have constructed the three kink models corresponding to the 1/2 (111){011} and 1/2 (111){112} edge dislocations (EDs) in bcc Fe using the molecular dynamics method. We found that the geometric structure of a kink depends on the type of ED and the structural energies of the atom sites in the dislocation core region, as well as the geometric symmetry of the dislocation core and the characteristic of the stacking sequence of atomic plane along the dislocation line. The formation energies and widths of the kinks on the 1/2 (111){011} and 1/2 (111){112} EDs are calculated, the formation energies are 0.05eV and 0.04eV, and widths are 6.02b and 6.51b, respectively (b is the magnitude of the Burgers vector). The small formation energies indicate that the formation of kink in the edge dislocation is very easy in bcc Fe.
陈丽群王崇愚于涛
三维复合介质波动方程多尺度辛几何算法被引量:1
2008年
本文针对三维复合介质波动方程,提出了一类多尺度辛几何算法.其主要内容有:1.快速振荡系数三维波动方程的多尺度渐近分析与收敛性估计;2.均匀化波动方程的辛几何算法;3.多尺度辛几何算法与数值实验结果.
董巧丽曹礼群翟方曼
关键词:复合介质有限元法辛几何算法
Dislocation formation and twinning from the crack tip in Ni_3Al:molecular dynamics simulations被引量:3
2009年
The mechanism of low-temperature deformation in a fracture process of Ll2 Ni3Al is studied by molecular dynamic simulations. Owing to the unstable stacking energy, the [011] superdislocation is dissociated into partial dislocations separated by a stacking fault. The simulation results show that when the crack speed is larger than a critical speed, the Shockley partial dislocations will break forth from both the crack tip and the vicinity of the crack tip; subsequently the super intrinsic stacking faults are formed in adjacent {111} planes, meanwhile the super extrinsic stacking faults and twinning also occur. Our simulation results suggest that at low temperatures the ductile fracture in Ll2 Ni3Al is accompanied by twinning, which is produced by super-intrinsic stacking faults formed in adjacent {111} planes.
谢红献王崇愚于涛杜俊平
关键词:CRACK
杂质P对α-Fe中刃型位错上扭折电子结构的影响被引量:3
2008年
利用离散变分方法和DMol方法,研究了P对bccFe中[100](010)刃型位错上扭折电子结构的影响,计算了杂质偏聚能、原子间相互作用能、电荷密度及态密度.计算结果表明:微量P引入体系后,电荷发生了重新分布,P原子得到电子,其周围Fe原子失去电子,由于P原子的3p轨道与近邻Fe原子的3d4s4p轨道之间杂化,使P原子与近邻Fe原子间有较强的相互作用,不利于扭折的迁移,使位错运动受阻,有利于材料强度的提高.同时,杂质P原子与基体原子间的成键主要是d,p轨道起作用,使得它们之间的成键有较强的方向性,有可能使材料韧性降低.
陈丽群于涛王崇愚邱正琛
关键词:电子结构刃型位错
γ-TiAl中Nb和Mo合金化效应的第一性原理研究被引量:26
2007年
基于密度泛函理论框架下的第一性原理离散变分(DV)和DMol方法研究了4d过渡金属元素在γ-TiAl中的择优占位行为及其Nb和Mo的合金化效应.转移能的计算结果表明Y,Zr,Nb,Mo在γ-TiAl中有Ti占位倾向,而Tc,Ru,Rh和Pb则表现为Al占位倾向.通过对差分电荷密度、Mulliken轨道集居数以及态密度的分析表明Nb和Mo可以提高杂质元素与其近邻基体元素之间的相互作用和相应原子之间的键合强度,导致较强的固溶强化效应.
党宏丽王崇愚于涛
关键词:密度泛函理论第一性原理电子结构
bcc Fe中〈100〉刃型位错上扭折的分子动力学模拟被引量:1
2007年
使用分子动力学方法,建立了对应于<100>{010}和<100>{011}刃型位错上的两种扭折模型,并计算了两种类型扭折的形成能、迁移能及宽度.计算结果表明,扭折结构依赖于位错类型及位错芯区原子的格位能.分析这些计算结果发现,<100>{010}刃型位错上的扭折既难以形成,又难以迁移;<100>{011}刃型位错的运动主要是通过扭折的成核,而不是扭折的迁移.
陈丽群王崇愚于涛
关键词:分子动力学刃型位错BCCFE
First-principles investigation of the impurity-kink interaction in bcc iron被引量:2
2008年
Using the first-principles self-consistent discrete variational method based on density functional theory, we investigated the effect of light impurities C and N on the electronic structure of kink on the [100](010) edge dislocation (ED) in bcc iron. Our energetic calculations show that the light impurities have a strong segregation tendency to enter the kink. The results of the charge distribution and the local den-sity of states indicate that the strong bonds between the impurity atoms and the neighboring Fe atoms are formed due to the hybridizations of impurity atoms 2p states and Fe 3d4s4p states. The introduction of light impurities can stabilize the kink system, and impedes the sideward motion of the kink in the [100](010) ED. This is, the light impurities induce a strong pinning effect on the [100](010) ED and may result in the solid solute hardening.
YU TaoCHEN LiQunWANG ChongYuQIU ZhengChenDU JunPing
关键词:电子结构密度泛函理论
The elastic properties and energy characteristics of Au nanowires:an atomistic simulation study
2008年
This paper have performed molecular static calculations with the quantum corrected Sutten Chen type many body potential to study size effects on the elastic modulus of Au nanowires with [100], [110] and [111] crystallographic directions, and to explore the preferential growth orientation of Au nanowires. The main focus of this work is the size effects on their surface characteristics. Using the common neighbour analysis, this paper deduces that surface region approximately consists of two layer atoms. Further, it extracts the elastic modulus of surface, and calculate surface energy of nanowire. The results show that for all three directions the Young's modulus of nanowire increases as the diameter increases. Similar trend has been observed for the Young's modulus of surface. However, the atomic average potential energy of nanowire shows an opposite change. Both the potential and surface energy of [110] nanowire are the lowest among all three orlentational nanowires, which helps to explain why Au nanowires possess a [110] preferred orientation during the experimental growth proceeds.
刘珊珊文玉华朱梓忠
关键词:NANOWIRE
First-principles study of diffusion behaviour of point defects in the O-terminated (0001) surface in wurtzite ZnO
2010年
A detailed first-principles study of the diffusion behaviour of point defects in the O-terminated (0001) surface in wnrtzite ZnO was performed. The 0 vacancy and interstitial are found to diffuse much more easily in surface than in bulk. The Zn vacancy has a similar migration barrier for both bulk and surface, but has much smaller barrier for the diffuse-in process. The Zn interstitial is difficult to diffuse in the surface directly, but it can diffuse into the bulk relatively easily. Specific values of corresponding migration barriers are obtained.
黄贵洋王崇愚王建涛
关键词:SEMICONDUCTOR
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