We characterize the structures of Ge1-xSnx films with x up to 0.14 grown on Ge(00l) by molecular-beam epitaxy at low temperature. The results show that Ge1-xSnx films are fully strained even at high Sn composition. The in-plane lattice parameters remain exactly the same as that of the substrate. Depth sensitivity analysis of the lattice parameters indicates that the strains of the epitaxial films are all in homogeneity. The films are fully strained. Poisson ratios, the force constants for the bonds between Ge and Sn are estimated and discussed in the present paper. Raman results show Ge–Ge, Ge–Sn,Sn–Sn vibrational modes. The Sn–Sn bond aggregation may respond to the high quality of our films. The fully strained epitaxy films with high content of Sn may be useful in designing the high quality GeSn films.
X-ray absorption spectra(XAS) at Mn K-edge and Fe K-edge in LaMn1-x Fe x O3show that with the increase of Fe substitution the chemical valence of Mn4+decreases,while the chemical valence of Fe3+remains unchanged.Structural distortions,such as the rotating and tilting for oxygen octahedron in the unit cell vary with iron content.A phase transition occurs at the Fe content values of 0.2～0.3.The evolutions of rotation and tilting angle of FeO6/MnO6octahedral may be the vital factors to the structure and magnetism.We believe that the spin configuration of Fe3+may vary from the intermediate spin t42g e1g(S = 3/2) to the higher spin t32g e2g(S = 5/2) near the phase transition.
La_(2/3)Sr_(1/3)MnO_3 films are deposited on(001) silicon substrates,in which the silicon surfaces have artificially been treated into the scallops-like,pyramid-like,and smooth polishing structure,by pulsed laser deposition.The magnetoresistances of the films on etched substrates under low applied field are very sensitive to the applied field,and much larger(14.3% for acid-etched,and 42.9% for alkali-etched) than that on the polished Si at 5 K.Zero-field-cooled and field-cooled magnetization behaviors are measured and analyzed.Remarkable upturn behaviors in temperature-dependent resistivity for all samples are observed at low temperature,which follows the Efros-Shkloskii variable range hopping law and the Arrhenius law.We believe that the rough surface may be useful in device design.
