您的位置: 专家智库 > >

国家自然科学基金(50571011)

作品数:2 被引量:0H指数:0
相关作者:褚武扬宿彦京乔利杰乔光利更多>>
相关机构:北京科技大学更多>>
发文基金:国家自然科学基金更多>>
相关领域:理学一般工业技术电气工程更多>>

文献类型

  • 2篇中文期刊文章

领域

  • 1篇电气工程
  • 1篇一般工业技术
  • 1篇理学

主题

  • 2篇PZT
  • 1篇陶瓷
  • 1篇铁电
  • 1篇铁电陶瓷
  • 1篇开裂
  • 1篇ELECTR...
  • 1篇DELAYE...
  • 1篇CONDUC...
  • 1篇CRACKI...

机构

  • 1篇北京科技大学

作者

  • 1篇乔光利
  • 1篇乔利杰
  • 1篇宿彦京
  • 1篇褚武扬

传媒

  • 1篇科学通报
  • 1篇Scienc...

年份

  • 2篇2006
2 条 记 录,以下是 1-2
排序方式:
PZT-5H导电缺口电致滞后开裂
2006年
研究了PZT-5H铁电陶瓷导电缺口发生电致滞后断裂的可能性及其规律.结果表明,PZT-5H导电缺口发生电致断裂的临界电场E_F=14.7±3.2 kV/cm.如外加电场E<EF,则在导电缺口前端瞬时产生电致微裂纹,若保持恒电场E,电致裂纹将缓慢扩展直至试样发生滞后断裂,滞后断裂的门槛电场E_(DF)= 9.9 kV/cm.如E<EDF,在恒电场作用下电致微裂纹也能缓慢扩展,但试样不发生断裂.如E<EK=4.9 kV/cm,则电致裂纹并不瞬时形核,只有在恒电场下经过一定的孕育期后电致裂纹才形核并扩展一定距离,但试样也不会发生断裂.如E<E_(DF)=2.4 kV/cm,即使长时间施加电场,裂纹也不形核.导电裂纹的滞后形核和滞后断裂归因于恒电场下从缺口顶端发出的电荷密度随时间而增大,当外加电场小于电荷发射的门槛电场时不会发生电致裂纹的滞后形核.
乔光利宿彦京乔利杰褚武扬
Study on delayed cracking of conductive notch under electric field in PZT-5H ferro- electric ceramics
2006年
Electric-field-induced delay cracking of conducting notch in PZT-5H ferroelectric ceramics has been studied using a compact specimen with a notch filled in conductive silver paste. The critical electric field that induces instant failure of the PZT-5H specimen is shown to be EF = 14.7±3.2 kV/cm. When an electric field lower than EF, but higher than EDF = 9.9 kV/cm was applied, a micro-crack formed at the conductive notch tip instantly, propagating slowly until the specimen failure. When the electric field was lower than EDF, the micro-crack propagated a short distance, and then stopped. When the electric field was lower than EK=4.9 kV/cm, no cracks formed at the conductive notch tip instantly, however, a delay micro-crack would form and propagate. When the electric field was lower than EDK=2.4 kV/cm, no cracks formed and delay propagation occurred. A model for electric charge emission and concentration at a conductive notch is proposed to explain the delay cracking of conducting notch.
QIAO Guangli SU Yanjing QIAO Lijie CHU Wuyang
关键词:铁电陶瓷PZT
共1页<1>
聚类工具0