Low-voltage silicon （Si）-based light-emitting diode （LED） is designed based on the former research of LED in Si-based standard complementary metal oxide semiconductor （CMOS） technology. The low-voltage LED is designed under the research of cross-finger structure LEDs and sophisticated structure enhanced LEDs for high efficiency and stable light source of monolithic chip integration. The device size of low-voltage LED is 45.85x38.4 （#m）, threshold voltage is 2.2 V in common condition, and temperature is 27 ~C. The external quantum efficiency is about 10-6 at stable operating state of 5 V and 177 mA.
