In this paper, the structural, electrical and optical properties of Al-doped zinc oxide (ZnO: Al) thin films onto quartz substrates prepared by electron beam evaporation technique were studied. All samples are polycrystal with a hexagonal structure and c-axis preferred orientation. The intense UV emissions and weak deep-level green emissions were observed. The films show high transparency, conductivity and high carrier concentration. Van der Pauw measurements show that the films are n-type degenerate semiconductor. The lowest resistivity is 6.710-4 Ocm at room temperature. These films exhibit a carrier density above 1020 cm-3. The conduction mechanism was discussed. The behavior of metallic conduction can be observed in the high temperature range.
CHEN Yanwei1,2, YU Wenhua1 & LIU Yichun1,2 1. Centre for Advanced Optoelectronic Functional Material Research, Northeast Normal University, Changchun 130024, China
设计了(CdZnTe,ZnSeTe)/ZnTe复合量子阱结构,并用吸收光谱、室温光致发光谱和飞秒脉冲抽运-探测方法研究了该复合结构中的激子隧穿过程.分别测量了该结构中CdZnTe/ZnTe量子阱层和ZnSeTe/ZnTe量子阱层中激子衰减时间.观察到从CdZnTe/ZnTe量子阱层向ZnSeTe/ZnTe量子阱层的快速激子隧穿,隧穿时间为5.5 ps.
