Ultraviolet photo-lithography is employed to introduce two-dimensional (2D) photonic crystal (PC) structureon the top surface of GaN-based light emitting diode (LED).PC patterns are transferred to 460-nmthicktransparent indium tin oxide (ITO) electrode by inductively coupled plasma (ICP) etching.Lightintensity of PC-LED can be enhanced by 38% comparing with the one without PC structure.Rigorouscoupled wave analysis method is performed to calculate the light transmission spectrum of PC slab.Simulationresults indicate that total internal reflect angle which modulated by PC structure has been increasedby 7°,which means that the light extraction efficiency is enhanced outstandingly.
