The effect of silver nanostructures prepared by nanosphere lithography on the photoluminescence(PL) properties of blue-emitting In Ga N/Ga N quantum wells(QWs) is studied. Arrays of silver nanoparticles are fabricated to yield a collective surface plasmonic resonance(SPR) near to the QWs emission wavelength. A large enhancement in peak PL intensity is observed, when the induced SPR wavelength of the nanoparticles on the QWs sample matches the QWs emission wavelength. The study proves that the SPRs could enhance the light emission efficiency of semiconductor material.
This paper reports that a dual-wavelength white light-emitting diode is fabricated by using a metal-organic chemical vapor deposition method. Through a 200-hours' current stress, the reverse leakage current of this light-emitting diode increases with the aging time, but the optical properties remained unchanged despite the enhanced reverse leakage current. Transmission electron microscopy and cathodeluminescence images show that indium atoms were assembled in and around V-shape pits with various compositions, which can be ascribed to the emitted white light. Evolution of cathodeluminescence intensities under electron irradiation is also performed. Combining cathodeluminescence intensi- ties under electron irradiation and above results, the increase of leakage channels and crystalline quality degradation are realized. Although leakage channels increase with aging, potential fluctuation caused by indium aggregation can effectively avoid the impact of leakage channels. Indium aggregation can be attributed to the mechanism of preventing optical degradation in phosphor-free white light-emitting diode.
This paper presents a novel in-plane photonic crystal channel drop filter.The device is composed of a resonant cavity sandwiched by two parallel waveguides.The cavity has two resonant modes with opposite symmetries.Tuning these two modes into degeneracy causes destructive interference in bus waveguide,which results in high forward drop efficiency at the resonant wavelength.From the result of numerical analysis by using two-dimensional finite-difference time-domain method,the channel drop filter has a drop efficiency of 96% and a Q value of over 3000,which can be used in dense wavelength division multiplexing systems.
We demonstrate the fabrication of hexagonal nano-pillar arrays at the surface of GaN-based light-emitting diodes (LEDs) by nanosphere lithography. By varying the oxygen plasma etching time, we could tune the size and shape of the pillar. The nano-pillar has a truncated cone shape. The nano-pillar array serves as a gradual effective refractive index matcher, which reduces the reflection and increases light cone. It is found that the patterned surface absorbs more pumping light. To compare extraction efficiencies of LEDs, it is necessary to normalize the photoluminescence power spectrum with total absorption rate under fixed pumping power, then we could obtain the correct enhancement factor of the photoluminescence extraction efficiency and optimized structure. The highest enhancement factor of the extraction efficiency is 10.6.
We have fabricated a series of square-lattice hole photonic crystal (2PhC) arrays simultaneously at the un-current injection region on a special sample of GaN based light emitting diode (LED) by using focus ion beam milling (FIBM). The lattice constants of the 2PhC arrays vary from 230 to 1500 nm,while the 2PhC arrays have a constant area of about 9 μm×18 μm and a fixed depth of 150±10 nm which approaches but does not penetrate the active layer. Microscopic electroluminescence images and spectral measurements consistently confirm that the top emitting intensities from different 2PhCs are all enhanced compared with the unpatterned region. It is demonstrated that the output coupling of propagating guided modes is realized by the diffracted transmission of the 2PhCs. The enhancement factors of the guided modes compared with the unpatterned region are plotted as function of the lattice constant. It is found that the highest enhancements for the extraction of guided modes were obtained for the lattice constant of 230 and 460 nm of 2PhCs. The results are discussed by the two-dimensional rigorous coupled wave analysis (RCWA).
FU XingXing ZHANG Bei KANG XiangNing XU Jun XIONG Chang ZHANG GuoYi
We report on the growth and fabrication of nonpolar a-plane light emitting diodes with an in-situ SiN x interlayer grown between the undoped a-plane GaN buffer and Si-doped GaN layer.X-ray diffraction shows that the crystalline quality of the GaN buffer layer is greatly improved with the introduction of the SiN x interlayer.The electrical properties are also improved.For example,electron mobility and sheet resistance are reduced from high resistance to 31.6 cm 2 /(V · s) and 460 /respectively.Owing to the significant effect of the SiN x interlayer,a-plane LEDs are realized.Electroluminescence of a nonpolar a-plane light-emitting diode with a wavelength of 488nm is demonstrated.The emission peak remains constant when the injection current increases to over 20 mA.
The lattice-parameter effects on the diffracted transmission of GaN square-lattice photonic crystals (2PhC) at the wavelength of 460 nm were studied by using a rigorous coupled wave analysis (RCWA). The impacts of lattice parameters on the diffracted transmission are calculated in the ranges for lattice pitch from 100 nm to 2000 nm,fill factor from 0.1 to 0.9 and grating height from 100 nm to 1000 nm,respectively. Our simulation results confirm that the lattice pitch is the dominant factor of the diffraction. It determines how many orders of diffraction occur by the 2PhCs. The larger the lattice pitch,the higher the diffraction orders come into play. Moreover,besides the first-order Bragg diffraction,higher diffraction orders from large pitches of PhCs are also beneficial to the light extraction improvement. The higher enhancement factors of the integrated transmission were obtained from a wide range of pitches with micro-scale GaN 2PhCs. Three different diffraction mechanisms through wave vector analysis were used to discuss the simulation results.
XIONG Chang ZHANG Bei KANG XiangNing FU XingXing ZHANG GuoYi
