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国家重点基础研究发展计划(2013CB632103)

作品数:21 被引量:14H指数:3
相关作者:成步文薛春来刘智李传波张旭更多>>
相关机构:中国科学院厦门大学闽南理工学院更多>>
发文基金:国家重点基础研究发展计划国家自然科学基金福建省自然科学基金更多>>
相关领域:电子电信理学一般工业技术电气工程更多>>

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21 条 记 录,以下是 1-10
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掺杂对多层Ge/Si(001)量子点光致发光的影响
2013年
利用超高真空化学气相沉积设备,在Si(001)衬底上外延生长了多个四层Ge/Si量子点样品.通过原位掺杂的方法,对不同样品中的Ge/Si量子点分别进行了未掺杂、磷掺杂和硼掺杂.相比未掺杂的样品,磷掺杂不影响Ge/Si量子点的表面形貌,但可以有效增强其室温光致发光;而硼掺杂会增强Ge/Si量子点的合并,降低小尺寸Ge/Si量子点的密度,但其光致发光会减弱.磷掺杂增强Ge/Si量子点光致发光的原因是,磷掺杂为Ge/Si量子点提供了更多参与辐射复合的电子.
刘智李亚明薛春来成步文王启明
关键词:磷掺杂光致发光
Room temperature direct-bandgap electroluminescence from a horizontal Ge ridge waveguide on Si
2016年
We report a lateral Ge-on-Si ridge waveguide light emitting diode (LED) grown by ultrahigh vacuum chemical vapor deposition (UHV-CVD). Direct-bandgap electroluminescence (EL) of Ge waveguide under continuous current is observed at room temperature. The heat-enhancing luminescence and thermal radiation-induced superlinear increase of edge output optical power are found. The spontaneous emission and thermal radiation based on the generalized Planck radiation law are calculated and fit very well to the experimental results. The Ge waveguides with different lengths are studied and the shorter one shows stronger EL intensity.
何超刘智成步文
关键词:GE/SIWAVEGUIDEELECTROLUMINESCENCE
High-performance germanium n+/p junction by nickel-induced dopant activation of implanted phosphorus at low temperature
2016年
High-performance Ge n~+/p junctions were fabricated at a low formation temperature from 325℃ to 400℃ with a metal(nickel)-induced dopant activation technique. The obtained Ni Ge electroded Ge n+/p junction has a rectification ratio of 5.6×10~4 and a forward current of 387 A/cm^2at -1 V bias. The Ni-based metal-induced dopant activation technique is expected to meet the requirement of the shallow junction of Ge MOSFET.
黄巍陆超余珏魏江镔陈超文汪建元徐剑芳王尘李成陈松岩刘春莉赖虹凯
关键词:GERMANIUM
Formation of high-Sn content polycrystalline GeSn films by pulsed laser annealing on co-sputtered amorphous GeSn on Ge substrate被引量:1
2017年
Polycrystalline Ge1-xSnx(poly-Ge1-xSnx) alloy thin films with high Sn content(〉 10%) were fabricated by cosputtering amorphous GeSna-GeSn on Ge100 wafers and subsequently pulsed laser annealing with laser energy density in the range of 250 mJ/cm^2 to 550 mJ/cm^2. High quality poly-crystal Ge0.90 Sn0.10 and Ge0.82 Sn0.18 films with average grain sizes of 94 nm and 54 nm were obtained, respectively. Sn segregation at the grain boundaries makes Sn content in the poly-GeSn alloys slightly less than that in the corresponding primary a-GeSn. The crystalline grain size is reduced with the increase of the laser energy density or higher Sn content in the primary a-GeSn films due to the booming of nucleation numbers. The Raman peak shift of Ge-Ge mode in the poly crystalline GeSn can be attributed to Sn substitution, strain,and disorder. The dependence of Raman peak shift of the Ge-Ge mode caused by strain and disorder in GeSn films on full-width at half-maximum(FWHM) is well quantified by a linear relationship, which provides an effective method to evaluate the quality of poly-Ge1-xSnx by Raman spectra.
张璐洪海洋王一森李成林光杨陈松岩黄巍汪建元
Si基IV族光电器件的研究进展(一)—激光器被引量:3
2014年
Si基光互连具有高速度、高带宽、低功耗、可集成等特点,是解决Si基集成电路发展瓶颈的一个重要途径。在Si基光互连的关键器件中,除了Si基高效光源以外,其他的器件都已经实现。同为IV族元素的Ge具有独特的准直接带隙的能带结构,有望通过能带工程等手段实现高效发光。近年来,Si基IV族发光材料和发光器件有了许多重要进展。回顾了Si基IV族发光材料和发光器件的最新成果,如Si衬底上张应变的Ge、Ge发光二极管及激光器、GeSn发光器件,并对结果进行了讨论。最后展望了Si基IV族激光器的发展趋势。
刘智张旭何超黄文奇薛春来成步文
关键词:发光二极管激光器发光
硅基IV族光电器件研究进展(二)——光电探测器被引量:3
2014年
基于Ge、GeSn等IV族材料的硅基探测器与Si CMOS工艺兼容性好,成本低廉,并且易于与硅基波导器件集成,因而具有非常重要的应用价值。介绍了中国科学院半导体研究所在相关硅基IV族合金材料外延制备及相关器件方面的研究,重点介绍在硅基Ge面入射探测器、波导型探测器、吸收电荷倍增分离型(SACM)结构雪崩光电探测器以及GeSn光电探测器方面的一些研究进展。
李冲张东亮薛春来李传波成步文王启明
关键词:探测器光电探测器光学器件
A thin transition film formed by plasma exposure contributes to the germanium surface hydrophilicity
2016年
Plasma treatment and 10% NH_4OH solution rinsing were performed on a germanium(Ge) surface.It was found that the Ge surface hydrophilicity after O_2 and Ar plasma exposure was stronger than that of samples subjected to N_2 plasma exposure. This is because the thin Ge Ox film formed on Ge by O_2 or Ar plasma is more hydrophilic than Ge Ox Ny formed by N_2 plasma treatment. A flat(RMS 〈 0:5 nm) Ge surface with high hydrophilicity(contact angle smaller than 3°) was achieved by O_2 plasma treatment, showing its promising application in Ge low-temperature direct wafer bonding.
赖淑妹毛丹枫黄志伟许怡红陈松岩李成黄巍汤丁亮
快速熔融法制备高锡组分的绝缘衬底上的锗锡(GSOI)
锗锡是硅基光电子领域最有潜力的材料之一。锗锡不仅可以通过锡组分来调节带隙和能带结构,实现0~0.8e V的带隙可调和间接带隙与直接带隙能带结构的转变[1,2],而且锗锡是四族材料,可以兼容现有的硅CMOS工艺。然而,由于...
刘智丛慧杨帆李传波成步文
关键词:绝缘衬底
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简并态锗在大注入下的自发辐射谱模拟
2017年
基于费米狄拉克模型模拟了应变、温度以及掺杂对简并态锗的直接带自发辐射谱的影响.随着温度升高,更多的电子被激发到导带中,使得锗自发辐射谱的峰值强度和积分强度随温度的升高而增大.对自发辐射谱峰值强度的m因子进行计算,结果表明张应变可以显著提高锗自发辐射的温度稳定性.在相同应变水平下,由Γ-hh跃迁引起的自发辐射谱峰值强度大于Γ-lh跃迁引起的自发辐射谱峰值强度,但二者的积分强度几乎相等.此外,计算结果还证明了n型掺杂能显著提高锗的自发辐射强度.以上结果对于研究简并态半导体的自发辐射性质有重要的参考意义.
汪建元林光杨王佳琪李成
关键词:掺杂
Simulation of the effects of defects in low temperature Ge buffer layer on dark current of Si-based Ge photodiodes
2017年
The influence of defects in low temperature Ge layer on electrical characteristics of p-Ge/i-Ge/n-Si and n-Ge/i-Ge/p-Ge photodiodes(PDs) was studied.Due to a two-step growth method,there are high defect densities in low-temperature buffer Ge layer.It is shown that the defects in low-temperature Ge layer change the band diagrams and the distribution of electric field,leading to the increase of the total dark current for p-Ge/i-Ge/n-Si PDs,whereas these defects have no influence on the dark current for n-Ge/i-Ge/p-Ge PDs.As a complement,a three-dimensional simulation of the total current under illumination was also performed.
Xiaohui YiZhiwei HuangGuangyang LinCheng LiSongyan ChenWei HuangJun LiJianyuan Wang
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