The microwave dielectric properties of ZrO2-SnO2-TiO2 （ZST） system ceramics were stu- died as a function of the amount of Sb2O5 dopant. With the addition of 0—0.50/0 Sb2O5 （molar ratio）, the substitution of Ti 4+ ions with Sb 5+ ions decreased the sintering temperature and increased the quality factor Q due to the reduction of oxygen vacancies. When the amount of Sb 5+ increased further （above 0.50/0）, Q was decreased by increasing the electron concentration. When the system doped with 0.50/0 Sb2O5 was sintered at 1 150 ℃ for 6 h, the relative dielectric constant ε, Qf0, and the temperature coefficient of resonant frequency （TCF） were 38.46, 44 500 GHz,20.0×10 -6 /℃, respectively, at 6 GHz.
High performance X8R dielectric ceramics were prepared by dopingBi2O3 to BaTiO3-based ceramics.The effect of small amounts（≤1.2 mol%） ofBi2O3 additive on the microstructure and dielectric properties of BaTiO3-based ceramics have been investigated.The Bi2O3 ,acting as a sintering additive,can effectively lower the sintering temperature of BaTiO3-based ceramics from 1300 to 1130 °C.The bulk density of BaTiO3-based ceramics increased and reached the maximum value with increasingBi2O3 content.The dielectric constant increased with increasingBi2O3 until it reached the maximum value with 0.8 mol%Bi2O3 additive,and the dielectric loss decreased with increasingBi2O3 content.Optimal dielectric properties of ε=2470,tanδ=0.011 and △ε/ε 25 ≤±9%（-55-150 °C） were obtained for the BaTiO3-based ceramics doped with 0.8 mol%Bi2O3 sintered at 1130 °C for 6 h.
Shunhua Wu Xuesong Wei Xiaoyong Wang Hongxing Yang Shunqi Gao
The structures and dielectric properties of Ba6-3xNd8＋2xTi18O54 system（x=2/3） doped with different contents of Bi2O3, whose final molecular formula is Ba6-3x（Nd1-yBiy）8＋2xTi18O54 were investigated. It is indicated that the dielectric constant increases greatly whereas Q value（f0=4 GHz） decreases with the increase of Bi2O3 content. However, the temperature coefficient could be controlled below 0±30×10^-6/℃ in the experiment. These phenomena are related to the appearance of a new phase, Bi4Ti3O12, which has high dielectric constant. Also, that Bi^3＋（0.13 nm） substitutes for Nd^3＋（0.099 5 nm） will increase the unit cell volume, which will lead to the enlargement of the octahedron B site occupied by Ti^4＋. So the spontaneous polarization of Ti^4＋ ions will be strengthened. Besides, Bi^3＋ will fill up some vacancies which Ba^2＋ or Nd^3＋ ions leave in two A1 sites and four A2 sites. More positive ions polarize, which also contributes to higher dielectric constant. The samples got with the optimium properties are sintered at 1 200 ℃ for 4 h, when y=0.25, ε≈110, Q≈5 400（f0=4 GHz）, TCC=-4.7×10^-6/℃; When y=0.3, ε≈120, Q≈5 000（f0=4 GHz）, TCC=-24×10^-6/℃.
The microwave dielectric properties and microstructure of BaTi4.3ZnyO9.6＋y ＋0.02 mol% SnO2＋0.01 mol% MnCO3＋x mol% Nb2O5（x=0-0.05, y=0-0.08） system ceramics were studied as a function of the amount of ZnO and Nb2O5 doped. Addition of （y=0-0.05） ZnO and （x=0-0.025） Nb2O5 enhanced the reactivity and decreased the sintering temperature effectively. It also increased the dielectric constant ε r and quality factor Q（=1/tan 8） of the system due to the substitution of Ti^4＋ ions with incorporating Zn^2＋and Nb^5＋ ions, which was analyzed by the reaction ZnO＋Nb2O5＋ 3 TiTxTi →ZnTi＋ 2NbTi＋3TiO2. When the system doped with （y=0.05） ZnO and （x=0.025） Nb205 were sintered at 1 160 ℃ for 6 h, the εr. Qf0 value and rfwere 36.5, 42 000 GHz, and＋1.8 ppm/℃, respectively, at 5 GHz.
