Photoluminescence (PL) of Bi12GeO20 and Mo doped Bi12GeO20 (Mo: Bi12GeO20) crystals in visible and near-infrared (NIR) spectral regions were studied. X-ray diffraction analysis, absorption and Raman scattering spectra of these crystals were also measured. Pure Bi12GeO20 after annealing in N2 atmosphere at 450 oC and 550 °C show predominant emissions at about 745 and 1250 nm bands, while the emission peaks of Mo:Bi12GeO20 crystals untreated or after annealing in Ar at 300 °C are at around 538 and 1165 nm. The results suggest that annealing induces intrinsic luminescence of Bi in pure Bi12GeO20 at room temperature and Mo influences the luminescence centers of Bi12GeO20. The emission peaks of Bi12GeO20 and Mo: Bi12GeO20 probably owe to lower-valent Bi ions.
YU PingShengSU LiangBiTANG HuiLiGUO XinZHAO HengYuYANG QiuHongXU Jun
By using a reflective graphene oxide as saturable absorber, a diode-pumped passively mode-locked Yb^3＋：Sc2Si O5（Yb：SSO） laser has been demonstrated for the first time. Without extra negative dispersion compensation, the minimum pulse duration of 1.7 ps with a repetition rate of 94 MHz was obtained at the central wavelength of 1062.6 nm. The average output power amounts to 355 m W under the absorbed pump power of 15 W. The maximum peak power of the mode-locking laser is up to 2.2 k W, and the single pulse energy is 3.8nJ.
