以无机盐为原料,用溶胶-凝胶技术在S i(111)衬底上制备(100)取向M gO薄膜。镁硝酸盐的冰醋酸溶液加热回流转化形成的M g(CH3COO)2,与乙酰丙酮(A cA c)分子形成环状螯合物M g(CH3COO)2-x(A cA c)x可抑制M g2+离子的过度水解,经水解形成的M g(OH)2-x(A cA c)x羟基聚合形成镁的羟基簇状结构溶胶。丙三醇(GL)防止羟基镁过度聚合,聚乙烯醇(PVA)分子中强极性基团-OH和金属离子螯合或化学吸附,使镁的羟基簇状结构溶胶具有线状或网状结构,易于成膜。有机添加剂也会使M gO薄膜在热处理过程的热应力因薄膜塑性增强而降低。文中对形成的M gO薄膜的微结构、形貌等进行了分析,通过M gO薄膜二次电子发射系数γ值的测定,反馈M gO薄膜的性能,为提高PDP(p lasm a d isp lay panels)性能提供依据。
ZnSe/SiO2 composite thin films was prepared by sol-gel method. XRD results indicate the phase structure of ZnSe particles embedded in ZnSe/SiO2 composite thin films is sphalerite (cubic ZnS). Spectroscopic ellipsometers were used to investigated the dependences of ellipsometric angle with wavelength of ZnSe/SiO2 composite thin films. The optical constant, thickness, porosity and the concentration of ZnSe of ZnSe/SiO2 thin composite films were fitted according to Maxwell-Garnett effective medium theory. The thickness of ZnSe/SiO2 composite thin thin films was also measured through surface profile. The photoluminescence properties of ZnSe/SiO2 thin composite thin films was investigated through fluorescence spectrometer. The photoluminescence results show that the emission peak at 487 nm (2.5 eV) is excited at 395 nm corresponds to the band-to-band emission of sphalerite ZnSe crystal(2.58 eV). The strength free exciton emission and other emission peaks correlating to ZnSe lattice defect were also observed.
