We demonstrate the polarization of resistive switching for a Cu/VOx/Cu memory cell.The switching behaviors of Cu/VOx/Cu cell are tested by using a semiconductor device analyzer(Agilent B1500A),and the relative micro-analysis of I-V characteristics of VOx/Cu is characterized by using a conductive atomic force microscope(CAFM).The I-V test results indicate that both the forming and the reversible resistive switching between low resistance state(LRS) and high resistance state(HRS) can be observed under either positive or negative sweep.The CAFM images for LRS and HRS directly exhibit evidence for the formation and rupture of filaments based on positive or negative voltage.The Cu/VOx/Cu sandwiched structure exhibits reversible resistive switching behavior and shows potential applications in the next generation of nonvolatile memory.
The VO2 thin film with high performance of metal–insulator transition(MIT) is prepared on R-sapphire substrate for the first time by magnetron sputtering with rapid thermal process(RTP). The electrical characteristic and THz transmittance of MIT in VO2film are studied by four-point probe method and THz time domain spectrum(THz-TDS). X-ray diffraction(XRD), X-ray photoelectron spectroscopy(XPS), atomic force microscopy(AFM), and search engine marketing(SEM)are employed to analyze the crystalline structure, valence state, surface morphology of the film. Results indicate that the properties of VO2film which is oxidized from the metal vanadium film in oxygen atmosphere are improved with a followup RTP modification in nitrogen atmosphere. The crystallization and components of VO2film are improved and the film becomes compact and uniform. A better phase transition performance is shown that the resistance changes nearly 3 orders of magnitude with a 2-?C hysteresis width and the THz transmittances are reduced by 64% and 60% in thermal and optical excitation respectively.
Vanadium dioxide thin films were fabricated through annealing vanadium oxide thin films deposited by dual ion beam sputtering. X-ray diffraction (XRD), atom force microscopy (AFM), and Fourier transform infrared spectrum (FTIR) were employed to measure the crystalline structure, surface morphology, and infrared optical transmittance. The phase transition properties were characterized by transmittance. The results show that the annealed vanadium oxide thin film is composed of monoclinic VO2, with preferred orientation of (011). The maximum of transmittance change is beyond 65% as the temperature increases from 20 to 80 C. The reversible changes in optical transmittance against temperature were observed. The change rate of transmittance at short wavelength is higher than that at long wavelength at the same temperature across semiconductor-metal phase transition. This phenomenon was discussed using diffraction effect.
