A two-dimensional （2D） fluid model is presented to study the behavior of silicon plasma mixed with SiH4 , N2 , and NH3 in a radio-frequency capacitively coupled plasma （CCP） reactor. The plasma–wall interaction （including the deposition） is modeled by using surface reaction coefficients. In the present paper we try to identify, by numerical simulations, the effect of variations of the process parameters on the plasma properties. It is found from our simulations that by increasing the gas pressure and the discharge gap, the electron density profile shape changes continuously from an edge-high to a center-high, thus the thin films become more uniform. Moreover, as the N2 /NH3 ratio increases from 6/13 to 10/9, the hydrogen content can be significantly decreased, without decreasing the electron density significantly.
A self-consistent fluid model is employed to investigate the coagulation stage of nanoparticle formation, growth, charging, and transport in a radio-frequency capacitively coupled parallel-plate acetylene （C2H2） discharge. In our simulation, the distribution of neutral species across the electrode gap is determined by mass continuity, momentum balance, and energy balance equations. Since a thermal gradient in the gas temperature induced by the flow of the neutral gas, a careful study of the thermophoretic force on the spatial distribution of the nanoparticle density profiles is indispensable. In the present paper, we mainly focus on the influences of the gas flow rate, voltage, and gas pressure on the spatial distribution of the nanoparticle density. It appears that the resulting density profile of the 10-nm particles experiences a significant shift towards the upper showerhead electrode once the neutral increasing the gas flow rate. Thus, the flow of neutral gas can the plasma. equations are applied, and a serious shift is observed when strongly influence the spatial distribution of the particles in
The electronic structures of solid solutions CuGal_xlnxTe2 are systematically investigated using the full-potential all-electron linearized augmented plane wave method. The calculated lattice parameters almost linearly increase with the increase of the In composition, which are in good agreement with the available experimental results. The calculated band structures with the modified Becke-Johnson potential show that all solid solutions are direct gap conductors. The band gap decreases linearly with In composition increasing. Based on the electronic structure calculated, we investigate the thermoelectric properties by the semi-classical Boltzmann transport theory. The results suggest that when Ga is replaced by In, the bipolar effect of Seebeck coefficient S becomes very obvious. The Seebeck coefficient even changes its sign from positive to negative for p-type doping at low carrier concentrations. The optimal p-type doping concentrations have been estimated based on the predicted maximum values of the power factor divided by the scattering time.
