AlN films with preferred c-axis orientation are deposited on Si substrates using the radio frequency(RF) magnetron sputtering method.The post-processing is carried out under the cooling conditions including high vacuum,low vacuum under deposition gas ambient and low vacuum under dynamic N2 ambient.Structures and morphologies of the films are analyzed by X-ray diffraction(XRD) and atomic force microscopy(AFM).The hardness and Young's modulus are investigated by the nanoindenter.The experimental results indicate that the(100) and(110) peak intensities decrease in the XRD spectra and the root-mean-square of roughness(Rrms) of the film decreases gradually with the increase of the cooling rate.The maximum values of the hardness and Young modulus are obtained by cooling in low vacuum under deposition gas ambient.The reason for orientation variation of the films is explained from the perspective of the Al-N bond formation.
Polycrystalline ZnO films are prepared using radio frequency magnetron sputtering on glass substrates which are sputter-etched for different time. Both the size of ZnO grains and the root-mean-square (RMS) roughness decrease, as the sputter-etching time of the substrate increases. More Zn atoms are bound to O atoms in the films, and the defect concentration is decreased with increasing sputter-etching time of substrate. Meanwhile, the crystallinity and c-axis orientation are improved at longer sputter-etching time of the substrate. The Raman peaks at 99 cm-1, 438 cm-1 and 589 cm-1 are identified as E2(low), E2(high) and E1(LO) modes, respectively, and the position of E1(LO) peak blue shifts at longer sputter-etching time. The transmittances of the films, which are deposited on the substrate and etched for 10 min and 20 min, are higher in the visible region than that of the films deposited under longer sputter-etching time of 30 min. The bandgap increases from 3.23 eV to 3.27 eV with the increase of the sputter-etching time of substrate.
The degradation of phenols has become urgent issues.In this paper,the diamond film electrode modified by photochemistry is chosen as the research object for phenol degradation.The boron-doped diamond films,which are modified and unmodified,are characterized by the X-ray photoelectron spectroscopy(XPS).Cyclic voltammograms are used to test the electrochemical window.It is found that the current value of tantalum/boron-doped diamond(Ta/BDD) electrode with amino modification increases two orders of magnitude in degrading the nitro-phenol,when the amino-modified rate is only 1.9%.The current value is enhanced from-4.0 × 10-4 A-4.0 × 10-4 A to-4.0 × 10-2A-4.0 × 10-2A.In addition,in order to understand the excellent characteristics of Ta/BDD electrode modified by photochemistry for phenol degradation,the efficiency of degradation is also discussed.
C-axis oriented ZnO films are deposited on polished diamond substrates in various O2/(O2+Ar) ratios using the radio frequency(RF) magnetron sputtering technique and are subsequently annealed in oxygen ambience under the same conditions.Structural,morphologic and electrical properties of ZnO films are characterized by X-ray diffraction(XRD),high-resistance instrument,energy dispersive X-ray spectroscopy(EDS) and scanning electronic microscopy(SEM).As the O2/(O2+Ar) ratio increasing from 1/12 to 5/12,the crystallinity of the as grown ZnO films becomes better and the electrical resistivity increases slowly.After annealing,the ZnO films deposited in O2/(O2+Ar) =1/12 and 3/12 are improved greatly in crystallinity,and their electrical resistivity is enhanced by two orders of magnitude,while those deposited in O2/(O2+Ar) =5/12 are scarcely changed in crystallinity,and their resistivity is only increased by one order.In addition,the ZnO films deposited in O2/(O2+Ar) =3/12 and annealed in oxygen are with the best crystal quality and the highest resistivity.
