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国家自然科学基金(s60906033)

作品数:2 被引量:1H指数:1
发文基金:国家自然科学基金天津市自然科学基金国家重点基础研究发展计划更多>>
相关领域:电气工程理学更多>>

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Dynamic scaling and optical properties of Zn(S,O,OH) thin film grown by chemical bath deposition
2011年
The scaling behavior and optical properties of Zn(S,O and OH) thin films deposited on soda-lime glass substrates by chemical bath deposition method were studied by combined roughness measurements,scanning electron microscopy and optical properties measurement.Prom the scaling behaviour,the value of growth scaling exponentβ,0.38±0.06,was determined.This value indicated that the Zn(S,O,OH) film growth in the heterogeneous process was influenced by the surface diffusion and shadowing effect.Results of the optical properties measurements disclosed that the transmittance of the film was in the region of 70%-88%and the optical properties of the film grown for 40 min were better than those grown under other conditions.The energy band gap of the film deposited with 40 min was around 3.63 eV.
张毅李博研党向瑜武莉金晶李凤岩敖建平孙云
关键词:薄膜生长ZN粗糙度测量扫描电子显微镜
Influence of growth temperature and thickness on the orientation of Cu(In,Ga)Se_2 film被引量:1
2012年
Cu(In,Ga)Se2(CIGS) films are deposited on the Na-free glass substrate using three-stage co-evaporation process,and the effects of thickness and growth temperature on the orientation of CIGS film are investigated by X-ray diffraction(XRD) and scanning electron microscopy(SEM).When the growth of CIGS film does not experience the Cu-rich process,the increase of the growth temperature at the second stage(Ts2) promotes the(112) orientation of CIGS film,and weakens the(220) orientation.Nevertheless,when the growth of CIGS film experiences Cu-rich process,the increase of Ts2 significantly promotes the(220) orientation.In addition,with the thickness of CIGS film decreasing,the extent of(In,Ga)2Se3(IGS) precursor orientation does not change except for the intensity of Bragg peak,yet the(220) orientation of following CIGS film is hindered,which suggests that(112) plane preferentially grows at the initial growth of CIGS film.
李博研张毅刘玮孙云
关键词:生长温度CIGS薄膜CUX-射线衍射
生长温度与Se气压对不锈钢箔衬底上生长Cu(In,Ga)Se2薄膜及太阳电池性能的影响
<正>采用二次离子质谱、扫描电镜、X-射线衍射和拉曼光谱等测试方法,对生长温度和Se气压这两个参数对在沉积有Mo背电极的不锈钢箔上制备Cu(In,Ga)Se2(CIGS)薄膜的生长与性能影响进行了研究。衬底温度为500o...
张毅李博研武莉王标孙云
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