A promising method of ferroelectric domain inverted structures was demonstrated, which allows us to fabricate thicker domain inverted patterns by applying a lower external electric field in LiTaO3 crystal. The external field for the domain reversal of the 1.5 mm thick LiTaO3 at 500 ℃ was only 6 V·mm-1, which is lower by three orders of magnitude than that in LiTaO3 crystal at room temperature. The process of the domain inversion structure was also studied. The fabrication techniques are based on controlled temperature and field duration time.
