This paper presents a 1 kb sub-threshold SRAM in the 180 nm CMOS process based on an improved 11T SRAM cell with new structure.Final test results verify the function of the SRAM.The minimal operating voltage of the chip is 350 mV,where the speed is 165 kHz,the leakage power is 42 nW and the dynamic power is about 200 nW. The designed SRAM can be used in ultra-low-power SoC.
This paper presents an 8-bit sub-threshold microprocessor which can be powered by an integrated photosensitive diode.With a custom designed sub-threshold standard cell library and 1 kbit sub-threshold SRAM design, the leakage power of 58 nW,dynamic power of 385 nW @ 165 kHz,EDP 13 pJ/inst and the operating voltage of 350 mV are achieved.Under a light of about 150 kLux,the microprocessor can run at a rate of up to 500 kHz.The microprocessor can be used for wireless-sensor-network nodes.
