Electrical properties of Inx Al1-xN/AlN/GaN structure are investigated by solving coupled Schr（o|¨）dinger and Poisson equations self-consistently.The variations in internal polarizations in InxAl1-xN with indium contents are studied and the total polarization is zero when the indium content is 0.41.Our calculations show that the twodimensional electron gas（2DEG） sheet density will decrease with increasing indium content.There is a critical thickness for AIN.The 2DEG sheet density will increase with InxAl1-xN thickness when the AIN thickness is less than the critical value.However,once the AIN thickness becomes greater than the critical value,the 2DEG sheet density will decrease with increasing barrier thickness.The critical value of AIN is 2.8 nm for the lattice-matched In0.18Al0.82N/AlN/GaN structure.Our calculations also show that the critical value decreases with increasing indium content.
In this paper,InGaN/GaN multiple quantum well solar cells (MQWSCs) with an In content of 0.15 are fabricated and studied.The short-circuit density,fill factor and open-circuit voltage (V oc) of the device are 0.7 mA/cm 2,0.40 and 2.22 V,respectively.The results exhibit a significant enhancement of V oc compared with those of InGaN-based hetero and homojunction cells.This enhancement indicates that the InGaN/GaN MQWSC offers an effective way for increasing V oc of an In-rich In x Ga 1 x N solar cell.The device exhibits an external quantum efficiency (EQE) of 36% (7%) at 388 nm (430 nm).The photovoltaic performance of the device can be improved by optimizing the structure of the InGaN/GaN multiple quantum well.
A novel three-dimensional lattice model of tetrapod-like zinc oxide whisker(T-ZnOw) resin matrix composite with a coordination number of 12 is constructed based on the special structure of T-ZnOw;the percolation phenomenon of the system is simulated by the Monte Carlo method,and the percolation threshold is obtained at 23.2%.The critical mixing ratio of T-ZnOw is calculated by considering the practical factors,and the result basically agrees with the reported one.Theoretical calculation shows that the critical mixing ratio mainly depends on the L/D ratio of T-ZnOw, and is also related to the size of T-ZnOw as well as the preparation method of the composite.The microwave absorbing mechanism of T-ZnOw composite is discussed,and conductivity loss and point discharge caused by the polarization effect are regarded to be two important means of energy dissipation.
A homemade 7×2 inch MOCVD system is presented.With this system,high quality GaN epitaxial layers,InGaN/GaN multi-quantum wells and blue LED structural epitaxial layers have been successfully grown. The non-uniformity of undoped GaN epitaxial layers is as low as 2.86%.Using the LED structural epitaxial layers, blue LED chips with area of 350×350μm^2 were fabricated.Under 20 mA injection current,the optical output power of the blue LED is 8.62 mW.
GaN films are grown on cone-shaped patterned sapphire substrates(CPSSs)by metal-organic chemical vapor deposition,and the influence of the temperature during the middle stage of GaN growth on the threading dislocation(TD)density of GaN is investigated.High-resolution X-ray diffraction(XRD)and cathodeluminescence(CL)wereusedtocharacterizetheGaNfilms.TheXRDresultsshowedthattheedge-typedislocation density of GaN grown on CPSS is remarkably reduced compared to that of GaN grown on conventional sapphire substrates(CSSs).Furthermore,whenthegrowthtemperatureinthemiddlestageofGaNgrownonCPSSdecreases,the full width at half maximum of the asymmetry(102)plane of GaN is reduced.This reduction is attributed to the enhancement of vertical growth in the middle stage with a more triangular-like shape and the bending of TDs.The CL intensity spatial mapping results also showed the superior optical properties of GaN grown on CPSS to those of GaN on CSS,and that the density of dark spots of GaN grown on CPSS induced by nonradiative recombination is reduced when the growth temperature in the middle stage decreases.
Yellow and blue luminescence in undoped GaN layers with different resistivities are studied by cathodoluminescence.Intense yellow and blue luminescence bands are observed in semi-insulating GaN,while in n-GaN the yellow luminescence and blue luminescence bands are very weak.The stronger yellow and blue luminescences in semi-insulating GaN are correlated to the higher edge-type dislocation density.The scanning cathodoluminescence image reveals strong defect-related luminescence at the grain boundaries where the dislocations accumulate.It is found that the relative intensity of the blue luminescence band to the yellow luminescence band increases with the cathodoluminescence beam energies and is larger in n-GaN with a lower density of edge-type dislocations.An approximately 3.35eV shoulder next to the near-band-edge peak is observed in n-GaN but not in semi-insulating GaN.A redshift of the near-band-edge peak with cathodoluminescence beam energy is observed in both samples and is explained by internal absorption.
A solar cell with a novel structure is investigated by means of the analysis of microelectronic and photonic structure(AMPS).The power conversion efficiency is investigated with the variations in interface recombination velocity, thicknesses of p-type layer,intrinsic layer,n-type layer,and doping density.Results show that it is available and preferable in theory to employ a-SiC:H as a window layer in p-a-SiC:H/i-a-Si:H/n-μc-Si solar cells,and provide a new approach to improving the power conversion efficiency of amorphous silicon solar cells.
In this paper,the enhanced performance of InGaN/GaN multiple quantum well solar cells grown on patterned sapphire substrates(PSS) was demonstrated.The short-circuit current(Jsc/ density of the solar cell grown on PSS showed an improvement of 60%,compared to that of solar cells grown on conventional sapphire substrate.The improved performance is primarily due to the reduction of edge dislocations and the increased light absorption path by the scattering from the textured surface of the PSS.It shows that the patterned sapphire technology can effectively alleviate the problem of high-density dislocations and low Jsc caused by thinner absorption layers of the InGaN based solar cell,and it is promising to improve the efficiency of the solar cell.
