为了减少芯片面积,提高电荷泵的增益,提出一种基于共享技术的电荷泵电路。通过改变两个子电荷泵的串并连接关系,既可以产生一种电压较高而电流驱动能力较小的负高压,也可以产生一种电压较低但是电流驱动能力很大的负高压,这不仅满足了系统在编程和擦除时对高压的不同需求,而且还节省了大约50%的芯片面积。电荷泵电路还采取了对其中P型M O S管的衬底电压进行动态控制的方法。模拟结果表明,该电荷泵的增益提高了大约14%。该电路特别适用于需要两种以上负高压以完成编程和擦除操作的快闪存储器。
In silicon-oxide-nitride-oxide-silicon （SONOS） memory and other charge trapping memories, the charge distribution after programming operation has great impact on the devic＇s characteristics,such as reading,programming/erasing, and reliability. The lateral distribution of injected charges can be measured precisely using the charge pumping method. To improve the precision of the actual measurement, a combination of a constant low voltage method and a constant high voltage method is introduced during the charge pumping testing of the drain side and the source side, respectively. Finally, the electron distribution after channel hot electron programming in SONOS memory is obtained,which is close to the drain side with a width of about 50nm.
