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国家自然科学基金(50932002)

作品数:10 被引量:11H指数:2
相关作者:朱俊刘兴钊李言荣张万里罗文博更多>>
相关机构:电子科技大学中国石油大学(华东)更多>>
发文基金:国家自然科学基金国家教育部博士点基金山东省自然科学基金更多>>
相关领域:电子电信一般工业技术理学轻工技术与工程更多>>

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10 条 记 录,以下是 1-10
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LiNbO_3/ZnO:Al集成结构的外延生长及电性能研究
2013年
采用脉冲激光沉积(PLD)法在蓝宝石衬底上先后外延生长了ZnO:Al(ZAO)和LiNbO3(LN)薄膜。通过X射线衍射分析(XRD)可知二者之间的外延关系为:LN(001)//ZAO(001)、LN[110]//ZAO[110]、LN[100]//ZAO[120]。制备了Au/LN/ZAO和ZAO/LN/ZAO两种电容器结构,对其进行了电流-电压(J-E)测试和铁电(P-E)分析,结果表明:LN/ZAO集成结构具有整流作用,ZAO/LN/ZAO结构表现出较好的绝缘性能,所制备的LN薄膜在室温下的剩余极化强度(Pr)约为1×10–6C/cm2,温度的升高能够促进电畴的翻转,使Pr增加为3×10–6C/cm2。
邓杰朱俊吴智鹏马陈鹏
关键词:脉冲激光沉积LINBO3ZNO
集成电子薄膜材料研究进展
2013年
首先分析了当前我国电子信息产业的现状,特别是电子材料与元器件行业的状况,结合国际上电子信息技术的发展趋势,阐述了研究集成电子材料的重要意义。文章结合作者的工作主要介绍了介电/GaN集成电子薄膜生长控制与性能研究情况,采用TiO2(诱导层)/MgO(阻挡层)组合缓冲层的方法控制介电/GaN集成薄膜生长取向、界面扩散,保护GaN基半导体材料的性能,降低介电/GaN集成薄膜界面态密度,建立界面可控的相容性生长方法。通过集成结构的设计与加工,研制出介电增强型GaN HEMT器件、高耐压GaN功率器件原型以及一体化集成的微波电容、变容管、压控振荡器、混频器等新型元器件。
李言荣张万里刘兴钊朱俊闫裔超
关键词:电子材料电子器件
Sodium beta-alumina thin films as gate dielectrics for AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors被引量:3
2012年
Sodium beta-alumina (SBA) is deposited on A1GaN/GaN by using a co-deposition process with sodium and Al2O3 as the precursors. The X-ray diffraction (XRD) spectrum reveals that the deposited thin film is amorphous. The binding energy and composition of the deposited thin film, obtained from the X-ray photoelectron spectroscopy (XPS) measurement, are consistent with those of SBA. The dielectric constant of the SBA thin film is about 50. Each of the capacitance voltage characteristics obtained at five different frequencies shows a high-quality interface between SBA and A1GaN. The interface trap density of metal-insulator-semiconductor high-electron-mobility transistor (MISHEMT) is measured to be (3.5-9.5)× 10^10 cm-2.eV-1 by the conductance method. The fixed charge density of SBA dielectric is on the order of 2.7× 1012 cm-2. Compared with the A1GaN/GaN metal-semiconductor heterostructure high-electron- mobility transistor (MESHEMT), the A1GaN/GaN MISHEMT usually has a threshold voltage that shifts negatively. However, the threshold voltage of the A1GaN/GaN MISHEMT using SBA as the gate dielectric shifts positively from -5.5 V to -3.5 V. From XPS results, the surface valence-band maximum (VBM-EF) of A1GaN is found to decrease from 2.56 eV to 2.25 eV after the SBA thin film deposition. The possible reasons why the threshold voltage of A1GaN/GaN MISHEMT with the SBA gate dielectric shifts positively are the influence of SBA on surface valence-band maximum (VBM-EF), the reduction of interface traps and the effects of sodium ions, and/or the fixed charges in SBA on the two-dimensional electron gas (2DEG).
田本朗陈超李言荣张万里刘兴钊
关键词:A1GAN/GAN
GaN基底上集成介电薄膜材料的生长方法研究被引量:5
2012年
将以极化为特征、具有丰富功能特性的介电氧化物材料通过外延薄膜的方式,在半导体GaN上制备介电氧化物/GaN集成薄膜,其多功能一体化与界面耦合效应可推动电子系统单片集成化的进一步发展。然而,由于2类材料物理、化学性质的巨大差异,在GaN上生长介电薄膜会出现严重的相容性生长问题。采用激光分子束外延技术(LMBE),通过弹性应变的TiO2的缓冲层来减小晶格失配度,降低介电薄膜生长温度,控制界面应变释放而产生的失配位错,提高了介电薄膜外延质量;通过低温外延生长MgO阻挡层,形成稳定的氧化物/GaN界面,阻挡后续高温生长产生的扩散反应;最终采用TiO2/MgO组合缓冲层控制介电/GaN集成薄膜生长取向、界面扩散,降低集成薄膜的界面态密度,保护GaN半导体材料的性能。所建立的界面可控的相容性生长方法,为相关集成器件的研发提供了一条可行的新途径。
李言荣朱俊罗文博张万里刘兴钊
关键词:GAN缓冲层
Significant performance enhancement in AlGaN/GaN high electron mobility transistor by high-κ organic dielectric
2010年
The electrical properties of A1GaN/GaN high electron mobility transistor (HEMT) with and without high-κ organic dielectrics are investigated. The maximum drain current ID max and the maximum transconductance gm max of the organic dielectric/A1CaN/GaN structure can be enhanced by 74.5%, and 73.7% compared with those of the bare A1GaN/GaN HEMT, respectively. Both the threshold voltage VT and gm max of the dielectric/AlGaN/GaN HEMT are strongly dielectric-constant-dependent. Our results suggest that it is promising to significantly improve the performance of the A1GaN/GaN HEMT by introducing the high-κ organic dielectric.
王泽高陈远富陈超田本朗褚夫同刘兴钊李言荣
LaAlO_3顶层对Pb(Zr,Ti)O_3薄膜微结构和性能的影响
2012年
利用脉冲激光沉积(PLD)法,在LaAlO3(LAO)基片上外延生长了高质量的PbZr0.52Ti0.48O3(PZT)薄膜。通过增加10nm厚的LAO顶层,所制备PZT薄膜的铁电剩余极化(Pr)由28.8μC/cm2增加为55.1μC/cm2。通过对微结构分析,表明薄膜电学性能的增强主要来源于LAO顶层对PZT薄膜表面形貌的优化。另外,与Pr不同,随LAO顶层厚度的增加,PZT薄膜的矫顽场单调增加。
郝兰众刘云杰朱俊张鹰
关键词:漏电流
Performance of an AlGaN/GaN MISHEMT with sodium beta-alumina for gate insulation and surface passivation
2013年
An A1GaN/GaN metal-insulator-semiconductor high-electron-mobility transistor (MISHEMT), with sodium beta-alumina (SBA) for both gate insulation and surface passivation, was investigated and compared with a conventional metal-semiconductor high-electron-mobility transistor (MESHEMT). The measured gate leakage current of the MISHEMT was reduced by approximately one order of magnitude as compared with that of the con- ventional MESHEMT. The saturation drain current of the A1GaN/GaN MISHEMT reached 830 mA/mm, which was about 43% higher than that of a conventional MESHEMT. The peak extrinsic transconductance of the MISHEMT was 103 mS/mm, which was similarly higher than that of the MESHEMT. The results suggested that the SBA thin film is an effective candidate gate dielectric for AIGaN/GaN MISHEMTs.
田本朗陈超张万里刘兴钊
关键词:A1GAN/GAN
Breakdown voltage enhancement of AlGaN/GaN high electron mobility transistors by polyimide/chromium composite thin film passivation被引量:2
2014年
A novel AlGaN/GaN high electric mobility transistor(HEMT) with polyimide(PI)/chromium(Cr) as thepassivationlayerisproposedforenhancingbreakdownvoltageanditsDCperformanceisalsoinvestigated.The Cr nanoparticles firstly introduced in PI thin films by the co-evaporation can be used to increase the permittivity of PI film. The high-permittivity PI/Cr passivation acting as field plate can suppress the fringing electric field peak at the drain-side edge of the gate electrode. This mechanism is demonstrated in accord with measured results. The experimental results show that in comparison with the AlGaN/GaN HEMTs without passivation, the breakdown voltage of HEMTs with the PI/Cr composite thin films can be significantly improved, from 122 to 248 V.
褚夫同陈超刘兴钊
The effects of ^(60)Co γ-ray irradiation on the DC characteristics of enhancement-mode AlGaN/GaN high-electron-mobility transistors
2012年
The effects of ^60Co γ-ray irradiation on the DC characteristics of AlGaN/GaN enhancement-mode high-electron- mobility transistors (E-mode HEMTs) are investigated. The results show that having been irradiated by^60Co γ-rays at a dose of 3 Mrad (Si), the E-mode HEMT reduces its saturation drain current and maximal transconductance by 6% and 5%, respectively, and significantly increases both forward and reverse gate currents, while its threshold voltage is affected only slightly. The obvious performance degradation of E-mode A1GaN/GaN HEMTs is consistent with the creation of electronegative surface state charges in the source-gate spacer and gate-drain spacer after being irradiated.
陈超田本朗刘兴钊戴丽萍邓新武陈远富
关键词:A1GAN/GAN
Dielectric thin films for GaN-based high-electron-mobility transistors被引量:1
2015年
The effects of dielectric thin films on the performance of GaN-based high-electron-mobility transistors (HEMTs) were reviewed in this work. Firstly, the nonpolar dielectric thin films which act as both the surface passivation layers and the gate insulators of the high-frequency GaN-based high-electron-mobility transistors were presented. Furthermore, the influences of dielectric thin films on the electrical properties of two-dimensional electron gas (2DEG) in the A1GaN/GaN hetero-structures were ana- lyzed. It was found that the additional in-plane biaxial tensile stress was another important factor besides the change in surface potential profile for the device perfor- mance improvement of the A1GaN/GaN HEMTs with dielectric thin films as both passivation layers and gate dielectrics. Then, two kinds of polar gate dielectric thin films, the ferroelectric LiNbO3 and the fluorinated A1203, were compared for the enhancement-mode GaN-based HEMTs, and an innovative process was proposed. At last, high-permittivity dielectric thin films were adopted as passivation layers to modulate the electric field and accordingly increase the breakdown voltage of GaN-based HEMTs. Moreover, the polyimide embedded with Cr particles effectively increased the breakdown voltage of GaNbased HEMTs. Finally, the effects of high-permittivity dielectric thin films on the potential distribution in the drift region were simulated, which showed an expanded electric field peak at the drain-side edge of gate electrode.
Yan-Rong LiXing-Zhao LiuJun ZhuJi-Hua ZhangLin-Xuan QianWan-Li Zhang
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