Boron nitride (BN) films for high-frequency surface acoustic wave (SAW) devices are deposited on Ti/Al/Si(111) wafers by radio frequency (RF) magnetron sputtering. The structure of BN films is investigated by Fourier transform infrared (FTIR) spectroscopy and X-ray diffraction (XRD) spectra, and the surface morphology and piezoelectric properties of BN films are characterized by atomic force microscopy (AFM). The results show that when the flow ratio of nitrogen and argon is 2:18, the cubic BN (c-BN) film is deposited with high purity and c-axis orientation, and when the flow ratio of nitrogen and argon is 4:20, the hexagonal BN (h-BN) film is deposited with high c-axis orientation. Both particles are uniform and compact, and the roughnesses are 1.5 nm and 2.29 nm, respectively. The h-BN films have better piezoelectric response and distribu- tion than the c-BN films.
The preparation of aluminum nitrogen(AlN) film without Al texture is of great significance for the manufacture of highperformance surface acoustic wave(SAW) device.We research the process factors which bring Al into AlN film due to radio frequency(RF) magnetron sputtering system,and discuss how the process parameters influence the AlN thin film containing Al.In the research,it is found that the high sputtering power,the low deposition pressures and low partial pressure of Ar can lead to growing Al-texture during AlN thin film preparation,and the experiment also shows that filling the chamber with nitrogen gas can recrystallize a small amount of Al composition into AlN film during the annealing process in the high temperature environment.
In order to reduce the noises affixed to the signals when testing high frequency devices,a single-port test mode(S11) is used to test frequency response of high frequency(GHz) and dual-port surface acoustic wave devices(SAWDs) in this paper.The feasibility of the test is proved by simulating the Fabry-perot model.The frequency response of the high-frequency dual-port resonant-type diamond SAWD is measured by S11 and the dual-port test mode(S21),respectively.The results show that the quality factor of the device is 51.29 and the 3 dB bandwidth is 27.8 MHz by S11-mode measurement,which is better than the S21 mode,and is consistent with the frequency response curve by simulation.
The high pressure radio frequency plasma enhanced chemical vapor deposition (RF-PECVD) process was adopted to prepare the n-i-p microcrystalline silicon solar cells,the influence of p-type layers on the performance of the solar cells was investigated,and the optimum p layer suited to the n-i-p microcrystalline silicon solar cells was obtained.The experimental results demonstrate that the performance of the solar cells can be highly affected by the structural and optical properties of the p-layers,and the performance of solar cells can be greatly improved by optimizing p layers.We have achieved an initial active-area efficiency of 8.17% (V oc =0.49 V,J sc =24.9 mA/cm 2 ,FF=67%) for the μc-Si:H single-junction n-i-p solar cells and an initial active-area efficiency of 10.93% (V oc =1.31 V,J sc =13.09 mA/cm 2 ,FF=64%) for the a-Si:H/μc-Si:H tandem n-i-p solar cells.
YUAN YuJie 1,2,ZHANG KaiLiang 1,2,WEI Zhen 1,2 & GENG XinHua 3 1 College of Electronics Information Engineering,Tianjin University of Technology,Tianjin 300384,China
