Many breakthroughs in technologies are closely associated with the deep understanding and development of new material platforms.As the main material used in microelectronics,Si also plays a leading role in the development of integrated photonics.The indirect bandgap,absence ofχ(2)nonlinearity and the parasitic nonlinear absorptions at the telecom band of Si imposed technological bottlenecks for further improving the performances and expanding the functionalities of Si microcavities in which the circulating light intensity is dramatically amplified.The past two decades have witnessed the burgeoning of the novel material platforms that are compatible with the complementary metal-oxide-semiconductor(COMS)process.In particular,the unprecedented optical properties of the emerging materials in the thin film form have resulted in revolutionary progress in microcavity photonics.In this review article,we summarize the recently developed material platforms for integrated photonics with the focus on chip-scale microcavity devices.The material characteristics,fabrication processes and device applications have been thoroughly discussed for the most widely used new material platforms.We also discuss open challenges and opportunities in microcavity photonics,such as heterogeneous integrated devices,and provide an outlook for the future development of integrated microcavities.
A 10-bit ratio-independent switch-capacitor(SC) cyclic analog-to-digital converter(ADC) with offset cancelingforaCMOSimagesensorispresented.TheproposedADCcompletesanN-bitconversionin1.5N clock cycles with one operational amplifier. Combining ratio-independent and polarity swapping techniques, the conversioncharacteristicoftheproposedcyclicADCisinherentlyinsensitivebothtocapacitorratioandtoamplifieroffset voltage. Therefore, the circuit can be realized in a small die area and it is suitable to serve as the column-parallel ADC in CMOS image sensors. A prototype ADC is fabricated in 0.18- m one-poly four-metal CMOS technology.The measured results indicate that the ADC has a signal-to-noise and distortion ratio(SNDR) of 53.6 dB and a DNL of C0:12/0:14 LSB at a conversion rate of 600 kS/s. The standard deviation of the offset variation of the ADC is reduced from 2.5 LSB to 0.5 LSB. Its power dissipation is 250 W with a 1.8 V supply, and its area is0.030.8 mm2.
