An obvious weak localization correction to anomalous Hall conductance(AHC) in very thin CoFeB film is reported.We find that both the weak localization to AHC and the mechanism of the anomalous Hall effect are related to the CoFeB thickness.When the film is thicker than 3 nm,the side jump mechanism dominates and the weak locaUzation to AHC vanishes.For very thin CoFeB films,both the side jump and skew scattering mechanisms contribute to the anomalous Hall effect,and the weak localization correction to AHC is observed.
The magnetic field response results on a five-layer structure given as Metglas /Terfenol-D/Pb(Zr,Ti)O3/Terfenol-D/Metglas were reported. Due to its high permeability, Metglas can be incorporated as the third phase into conventional Pb(Zr,Ti)O3/Terfenol-D laminates, which results in a stronger magnetoelectric(ME) response. The increase in Metglas thickness significantly influences the ME response as well. The ME voltage coefficient for a structure with a 150 μm thick Metglas layer on both sides of Terfenol-D/Pb(Zr,Ti)O3 laminates at 1 kHz was found to be 1.2 V/cmOe at dc magnetic bias field of 590 Oe under an ac magnetic drive of 1 Oe, which was notably higher in comparison to similar structures with other different Metglas thickness.
