A novel and simple method was employed to synthesize GaN films on porous silicon （PS） substrates, GaN films were obtained through the reaction between NH3 and Ga2O3 films deposited on the substrates with magnetron sputtering. Since GaN and PS are all good materials for luminescence, it is expected to obtain some new properties from GaN on PS. The samples were analyzed with X-ray diffraction （XRD） to identify crystalline structure. Fourier transmit infrared （FFIR） spectrum was used to analyze the chemical state of the samples. The films were observed with scanning electron microscopy （SEM） and were found to consist of many big crystal grains. Photoluminescence （PL） spectrum was used to illuminate the optical property of the GaN films.
A mass of GaN nanowires has been successfully synthesized on Si（111） substrates by magnetron sputtering through ammoniating Ga2O3/Co films at 950℃. X-ray diffraction, scanning electron microscopy, high resolution transmission electron microscope and Fourier transformed infrared spectra are used to characterize the samples. The results demonstrate that the nanowires are of single-crystal GaN with a hexagonal wurtzite structure and possess relatively smooth surfaces. The growth mechanism of GaN nanowires is also discussed.
Zinc nitride (Zn3N2) powder has been synthesized through the nitridation reaction of Zn powder with NH3 gas (at the flow rate of 500 ml/min) at the nitridation temperature of 600℃ for 120 min. X-ray diffraction (XRD) indicates that Zn3N2 is cubic in structure with the lattice constant being a = 0.9788 nm. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) show that Zn3N2 powder has surface morphology of various types. X-ray photoelectron spectroscopy (XPS) shows the differences in chemical bonding states between Zn3N2 and ZnO, and confirms the formation of N–Zn bonds. Observation through high resolution transmission electron microscopy (HRTEM) also indicates that the computer simulation of the structure of Zn3N2 is consistent with the structural model put forward by Partin.
ZONG Fujian1, MA Honglei1, XUE Chengshan2, ZHUANG Huizhao2, ZHANG Xijian1, MA Jin1, JI Feng1 & XIAO Hongdi1 1. School of Physics and Microelectronics, Shandong University, Jinan 250100, China
