Bil_xTbxFe03 thin films were prepared on Sn02 （fluorine doped tin oxide） substrates by a sol-gel method. The structural and electrical properties of the BiFe03 thin films were characterized and tested. The results indicated that the diffraction peak of the Tb-doped BiFe03 films was shifted towards right as the doping amounts were increased. The structure was transformed from the rhombohedral to tetragonal/orthorhombic phase. The Bio.sgTbo.11Fe03 thin film showed the well-developed P-E loops, which enhanced remnant polarization （Pr = 88.05 μC/cm2） at room temperature. The dielectric constant and dielectric loss of Bio.sgTbo.llFe03 thin film at 100 kHz were 185 and 0.018, respectively. Furthermore, the Bio.seTbo.llFe03 thin film showed a relatively low leakage current density of 2.07×10-5 A/cm2 at an applied electric field of 150 kV/cm. The X- ray photoelectron spectroscopy （XPS） spectra indicated that the presence of Fe2＋ ions in the Bio.egTbo.11Fe03 thin film was less than that in the pure BiFe03.
