Spontaneous self-sustained chaotic current oscillations are observed experimentally in lightly-doped weakly-coupled GaAs/Al0.45Ga0.55As superlattices at room temperature for the first time.The mole fraction of Aluminum in the barrier is chosen to be 0.45 to suppress the thermal carrier leakage through the X-band valley,The effective nonlinearity induced by the sequential well-to-well resonant tunneling can still be strong enough to induce spontaneous chaotic current oscillations even at room temperature,The frequency spectrum of the chaotic current oscillations is ranged from DC to 4 GHz,which can be used as ultra-wide-band noise sources with a bandwidth of several Giga Hertz.
We present a theoretical study on the electric field driven plasmon dispersion of the two-dimensional electron gas （2DEG） in A1GaN/GaN high electron mobility transistors （HEMTs）. By introducing a drifted Fermi-Dirac distribution, we calculate the transport properties of the 2DEG in the A1GaN/GaN interface by employing the balance-equation approach based on the Boltzmann equation. Then, the nonequilibrium Fermi-Dirac function is obtained by applying the calculated electron drift velocity and electron temperature. Under random phase approximation （RPA）, the electric field driven plas- mon dispersion is investigated. The calculated results indicate that the plasmon frequency is dominated by both the electric field E and the angle between wavevector q and electric field E. Importantly, the plasmon frequency could be tuned by the applied source-drain bias voltage besides the gate voltage （change of the electron density）.
