回顾了近10年基于半导体中量子限制效应红外探测器的进展.主要关注的是二维限制结构,即量子阱结构,形成的区别与传统红外光子探测的子带跃迁机理.在红外光电子领域作为新族的量子阱红外探测器(quantum well infrared photo-detector,QWIP)与最典型的红外探测器代表碲镉汞红外探测器进行了各自特色的分析,包括基本工作机理和材料与器件的制备技术等方面.对于QWIP发展的回顾提升了与碲镉汞红外探测器之间的互补关系.也给出了对于QWIP在未来发展方面的基本趋势.
The structural and optical properties of amorphous semiconductor mercury cadmium telluride (a-MCT) are obtained by the first principles calculations. The total pair distribution functions and the density of states show that the a-MCT has the semiconductor characteristic. The calculated results of dielectric function show that E2 peak of the imaginary of dielectric function for the crystal mercury cadmium telluride abruptly disappears in the amorphous case due to the long-range disorders. And the imaginary of dielectric function of a-MCT shows a large broad peak, which is in agreement with the available results of other amorphous semiconductors. From the linear extrapolation of the curve ωε 2(ω)1/2 versus ω, it can be obtained that the optical energy gap of amorphous semiconductor Hg0.5Cd0.5Te is 0.51±0.05 eV.
WANG LiangCHEN XiaoShuangLU WeiHUANG YanWANG XiaoFangZHAO JiJun
The progress in the quantum well infrared photo-detector (QWIP) based on quantum confinement in semiconductor in recent 10 years has been reviewed. The differences between QWIP and the HgCdTe (HCT) infrared detector as well as their compensation are analyzed. The outlook for near-future trends in QWIP technologies is also presented.
