A new method of nanocontact fabrication for Adreev reflection measurement based on the nanopore method using a SiN membrane with focused ion beam technique is presented. With this method, controllable, clean,tensionless nano-contacts for spin polarization probing can be obtained. Measurements of the fabricated samples show complicated spectral structures with a zero bias anomaly and dip structures from quasipartical interactions. A control sample of Co40Fe40B20 is measured with Nb tip method. None of the measured spectra can be explained satisfactorily by present theory. Further analysis of the contact interface and a more complete theory are needed to extract a reliable spin polarization message with the point contact Andreev reflection method.
王天兴魏红祥任聪韩秀峰Clifford ELangford R MBari M ACoey J M D
Magnetization configurations were calculated under various magnetic fields for nanocrystalline Pr-Fe-B permanent magnets by micromagnetic finite element method.According to the configurations during demagnetization process, the mechanism of magnetization reversal was analyzed.For the Pr2Fe14B with 10 nm grains or its composite with 10vol.% α-Fe, the coercivity was determined by nucleation of reversed domain that took place at grain boundaries.However, for Pr2Fe14B with 30 nm grains, coercivity was controlled by pinning of the nucle-ated domain.For Pr2Fe14B/α-Fe with 30vol.% α-Fe, the demagnetization behavior was characterized by continuous reversal of α-Fe moment.
Nano-ring-type magnetic tunnel junctions （NR-MTJs） with the layer structure of Ta（5）/Ir22Mn78（10）/ Co75Fe25（2）/Ru（0.75）/CoooFe20B20（3）/Al（0.6）-oxide/Co60Fe20B20（2.5）/Ta（3）/Ru（5） （thickness unit： nm） were nano-fabricated on the Si（100）/SiO2 substrate using magnetron sputtering deposition combined with the optical lithography, electron beam lithography （EBL） and Ar ion-beam etching techniques. The smaller NR-MTJs with the inner- and outer-diameter of around 50 and 100 nm and also their corresponding NR-MTJ arrays were nano-patterned. The tunnelling magnetoresistance （TMR ＆ R） versus driving current （I） loops for a spin-polarized current switching were measured, and the TMR ratio of around 35% at room temperature were observed. The critical values of switching current for the free Co60Fe20B20 layer relative to the reference Co6oFe2oB2o layer between parallel and anti-parallel magnetization states were between 0.50 and 0.75 mA in such NR-MTJs. It is suggested that the applicable MRAM fabrication with the density and capacity higher than 256 Mbit/inch2 even 6 Gbite/inch2 are possible using both I NR-MTJ＋1 transistor structure and current switching mechanism based on based on our fabricated 4×4 MRAM demo devices.
