For the first time we fabricated ZnO membranes with thicknesses of 2.4 nm by a facile one-pot synthesis in aqueous solution.The crystal analysis revealed that the hexagonal ZnO membranes were about 10 atomic layers in thickness.The ZnO membranes bent,scrolled,intersected with each other,and self-assembled to particles in micrometre size.The hierarchical assemblies showed sponge-like structures with room inside.In the growth process,a cationic polyelectrolyte was utilized to modulate growth behavior of the ZnO crystals.As a result,the preferred growth direction of ZnO membranes is along 0110,which was perpendicular to[0001]growth direction in a typical hydrothermal synthesis.The growth mechanism of the membranes was also discussed.
We evaluate the influence of the thermally assisted tunneling (TAT) mechanism on charge trapping memory (CTM) cell performance by numerical simulation, and comprehensively analyse the effects of the temperature, trap depth, distribution of trapped charge, gate voltage and parameters of TAT on erasing/programming speed and retention performance. TAT is an indispensable mechanism in CTM that can increase the detrapping probability of trapped charge. Our results reveal that the TAT effect causes the sensitivity of cell performance to temperature and it could affect the operational speed, especially for the erasing operation. The results show that the retention performance degrades compared with when the TAT mechanism is ignored.
