以LaNiO3做缓冲层,用射频磁控溅射法在SiO2/Si(100)衬底上制备出[0.9Pb(Sc0.5Ta0.5)O3-0.1PbTi 3/0.55Pb(Sc0.5Ta0.5)O3-0.45PbTiO3]4铁电多层薄膜。采用两步法在峰值温度800℃对薄膜进行退火。通过x射线衍射分析了薄膜的物相结构,通过电滞回线和漏电流曲线对薄膜的铁电性能进行了测量。研究发现,薄膜展现出高度(100)取向的钙钛矿结构和增强的铁电性,其剩余极化2Pr=26.2μc/cm2,矫顽场2Ec=53.9 k V/cm,100 k V/cm下漏电流密度为1.87×10-4A/cm2。分析了铁电性增强和漏电流增大的可能原因。
The 0.9Pb（Sc0.5Ta0.5）O3-0.1PbTiO3/0.55Pb（Sc0.5Ta0.5）O3-0.45 PbTiO3 multilayer thin films（（PSTT10/45）n, n = 1-6, 10） are deposited on SiO2/Si（100） substrates by radio frequency magnetron sputtering technique with La Ni O3 buffer and electrode layer, and the films are subsequently annealed by a two-step rapid thermal approach. It is found that the interfacial density of the film has an important influence on the electric property of the film. The electric property of the film increases and reaches its critical point with the increase of interface density, and then decreases with the further increase of the interface density. With an interfacial density of 16 μm-1, the film shows an optimized dielectric property（high dielectric constant, εr = 765, lowest dielectric loss, tan δ = 0.041, at 1 k Hz） and ferroelectric property（highest remnant polarization,2Pr = 36.9 μC/cm2, low coercive field, 2Ec = 71.9 k V/cm）. The possible reason for the electric behavior of the film is the competition of the interface stress with the interface defect.
