This paper investigates the effects of concentration on the crystalline structure, the morphology, and the charge carrier mobility of regioregular poly（3-hexylthiophene） （RR-P3HT） field-effect transistors （FETs）. The RR-P3HT FETs with RR-P3HT as an active layer with different concentrations of RR-P3HT solution from 0.5 wt% to 2 wt% are prepared. The results indicate that the performance of RR-P3HT FETs improves drastically with the increase of RR-P3HT weight percentages in chloroform solution due to the formation of more microcrystalline lamellae and bigger nanoscale islands. It finds that the field-effect mobility of RR-P3HT FET with 2 wt% can reach 5.78×10^-3 cm^2/Vs which is higher by a factor of 13 than that with 0.5 wt%. Further, an appropriate thermal annealing is adopted to improve the performance of RR-P3HT FETs. The field-effect mobility of RR-P3HT FETs increases drastically to 0.09 cm^2/Vs by thermal annealing at 150 ℃, and the value of on/off current ratio can reach 104.
The microstructural, optical, and magnetic properties and room-temperature photoluminescence （PL） ofMn-doped ZnO thin films were studied. The chemical compositions were examined by energy dispersive X-ray spectroscopy （EDS） and the charge state of Mn ions in the ZnO：Mn films was characterized by X-ray photoelectronic spectrometry （XPS）. From the X-ray diffraction （XRD） data of the samples, it can be found that Mn doping does not change the orientation of ZnO thin films. All the films prepared have a wurtzite structure and grow mainly along the c-axis orientation. The grain size and the residual stress were calculated from the XRD results. The optical transmittance of the film decreases with the increase of manganese content in ZnO. The room-temperature photoluminescence of the films shows that the in- tensity of near band energy （NBE） emission depends strongly on the Mn content. The hysteresis behavior indicates that the films with the Mn content below 9at% are ferromagnetic at room temperature.
Li-wei Wang Zheng Xu Fu-junZhang Su-ling Zhao Li-fang Lu
In this work, the influence of a small-molecule material, tris（8-hydroxyquinoline） aluminum （Alq3）, on bulk heterojunction （BHJ） polymer solar cells （PSCs） is investigated in devices based on the blend of poly（2-methoxy-5-（2- ethylhexyloxy）-1,4-phenylenevinylene） （MEH-PPV） and [6,6]-phenyl-C61-butyric acid methyl ester （PCBM）. By doping Alq3 into MEH-PPV：PCBM solution, the number of MEH-PPV excitons can be effectively increased due to the energy transfer from Alq3 to MEH-PPV, which probably induces the increase of photocurrent generated by excitons dissociation. However, the low carrier mobility of Alq3 is detrimental to the efficient charge transport, thereby blocking the charge collection by the respective electrodes. The balance between photon absorption and charge transport in the active layer plays a key role in the performance of PSCs. For the case of 5 wt.% Alq3 doping, the device performance is deteriorated rather than improved as compared with that of the undoped device. On the other hand, we adopt Alq3 as a buffer layer instead of commonly used LiF. All the photovoltaic parameters are improved, yielding an 80% increase in power conversion efficiency （PCE） at the optimum thickness （1 nm） as compared with that of the device without any buffer layer. Even for the 5 wt.% Alq3 doped device, the PCE has a slight enhancement compared with that of the standard device after modification with 1 nm （or 2 nm） thermally evaporated Alq3. The performance deterioration of Alq3-doped devices can be explained by the low solubility of Alq3, which probably deteriorates the bicontinuous D-A network morphology; while the performance improvement of the devices with Alq3 as a buffer layer is attributed to the increased light harvesting, as well as blocking the hole leakage from MEH-PPV to the aluminum （Al） electrode due to the lower highest occupied molecular orbital （HOMO） level of Alq3 compared with that of MEH-PPV.
We studied the luminescent and photovoltaic properties of poly(9,9-dioctylfluorene-co-bithiophene)(F8T2) based on ITO/PEDOT:PSS/F8T2/Bphen/LiF(0 or 1 nm)/Al and ITO/PEDOT:PSS/F8T2:PCBM/Bphen/Al.A stable and bright yellow emission was obtained from polymer F8T2,and the electroluminescence power reached 45 ?W at a 15 V driving voltage.Polymer F8T2 shows a broad absorption band from 400 to 500 nm,and has a shorter absorption edge at about 560 nm compared to that of the typical electron donor P3HT(650 nm).The photoluminescence quenching of F8T2 occurs with only a small fraction of blended PCBM due to the effective exciton dissociation at the interface between F8T2 and PCBM.Polymer solar cells(PSCs) using F8T2:PCBM as the active layer show a low power conversion efficiency(PCE) of 0.10% with an open circuit voltage(Voc) of 0.91 V and short circuit current density(Jsc) of 0.23 mA/cm2.The PSCs using F8T2:P3HT:PCBM as the active layer have a Voc of 0.85 V and Jsc of 3.02 mA/cm2,improving the PCE by about 0.90%.We attribute the improved cell performance to the higher number of photons harvested by P3HT molecules.
Ca2BO3Cl：Ce3＋, Ca2BO3Cl：Tb3＋, and Ca2BO3Cl：Ce3＋, Tb3＋ phosphors are synthesized by a high temperature solid-state reaction. The emission intensity of Ce3＋ or Tb3＋ in Ca2BO3Cl is influenced by the Ce3＋ or Tb3＋ doping content, and the optimum concentrations of Ce3＋ and Tb3＋ are 0.03 tool and 0.05 mol, respectively. The concentration quenching effect of Ce3＋ or Tb3＋ in Ca2BO3Cl occurs, and the concentration quenching mechanism is d-d interaction for either Ce3＋ or Tb3＋. The Ca21303Cl：Ce3＋, Tb3＋ can produce colour emission from blue to green by properly tuning the relative ratio between Ce3＋ and Tb3＋, and the emission intensity of Tb3＋ in Ca2BO3Cl can be enhanced by the energy transfer from Ce3＋ to Tb3＋. The results indicate that Ca2BO3Cl：Ce3＋, Tb3＋ may be a promising double emission phosphor for UV-based white light emitting diodes.
The contact effect on the performances of organic thin film transistors is studied here. A C60 ultrathin layer is inserted between Al source-drain electrode and pentacene to reduce the contact resistance. By a 3 nm C60 modification, the injection barrier is lowered and the contact resistance is reduced. Thus, the field-effect mobility increases from 0.12 to 0.52 cm2/（V.s）. It means that inserting a C60 ultra thin layer is a good method to improve the organic thin film transistor （OTFT） performance. The output curve is simulated by using a charge drift model. Considering the contact effect, the field effect mobility is improved to 1.15 cm2/（V-s）. It indicates that further reducing the contact resistance of OTFTs should be carried out.
