采用化学气相沉积方法,在无催化剂的条件下,通过改变衬底位置在Si(100)衬底上制备出了高取向的磷掺杂ZnO纳米线和纳米钉.测试结果表明,当衬底位于反应源上方1.5 cm处时,所制备的样品为钉状结构,而当衬底位于反应源下方1 cm处时样品为线状结构.对不同形貌磷掺杂ZnO纳米结构的生长机理进行了研究.此外,在ZnO纳米结构的低温光致发光谱中观测到了一系列与磷掺杂相关的受主发光峰.还对磷掺杂ZnO纳米结构/n-Si异质结I-V曲线进行了测试,结果表明,该器件具有良好的整流特性,纳米线和纳米钉异质结器件的开启电压分别为4.8和3.2 V.
Large-scale crystalline boron nanowires (BNWs) were synthesized by a simple chemical vapor deposition method on Au-coated Si substrates using two kinds of innoxious and inexpensive reactant materials as the precursor at relatively low temperature (≤1000°C).The morphology and structural properties of samples were characterized by SEM,TEM,SAED,and XPS analytic instruments.The BNWs have lengths of several tens of micrometers with diameters of 80-150 nm.SAED and HRTEM analytic results testified that BNWs were single crystal core with a thin oxide sheath.By comparison of the BNW samples synthesized at difference temperatures,we conclude that BNWs have lower growth rate at 950°C,whilst the suitable growth rate can be gained at 1000°C.This result shows that BNWs can be synthesized via one step CVD process at 1000°C,and overly high growth temperature (≥1200°C) is probably unnecessary.
