A rigorous theoretical model for Ino.53Gao.47As/InP single photon avalanche diode is utilized to investigate the dependences of single photon quantum efficiency and dark count probability on structure and operation condition. In the model, low field impact ionizations in charge and absorption layers are allowed, while avalanche breakdown can occur only in the multiplication layer. The origin of dark counts is discussed and the results indicate that the dominant mechanism that gives rise to dark counts depends on both device structure and operating condition. When the multiplication layer is thicker than a critical thickness or the temperature is higher than a critical value, generation-recombination in the absorption layer is the dominative mechanism; otherwise band-to-band tunneling in the multiplication layer dominates the dark counts. The thicknesses of charge and multiplication layers greatly affect the dark count and the peak single photon quantum efficiency and increasing the multiplication layer width may reduce the dark count probability and increase the peak single photon quantum efficiency. However, when the multiplication layer width exceeds 1 μm, the peak single photon quantum efficiency increases slowly and it is finally saturated at the quantum efficiency of the single photon avalanche diodes.
In this paper, the theoretical analysis and simulating calculation were conducted for a basic two-stage semiconductor thermoelectric module, which contains one thermocouple in the second stage and several thermocouples in the first stage. The study focused on the configuration of the two-stage semiconductor thermoelectric cooler, especially investigating the influences of some parameters, such as the current I1 of the first stage, the area A1 of every thermocouple and the number n of thermocouples in the first stage, on the cooling performance of the module. The obtained results of analysis indicate that changing the current I1 of the first stage, the area A1 of thermocouples and the number n of thermocouples in the first stage can improve the cooling performance of the module. These results can be used to optimize the configuration of the two-stage semiconductor thermoelectric module and provide guides for the design and application of thermoelectric cooler.
