A TiO2/P3HT hybrid solar cell was fabricated by infiltrating P3HT into the pores of TiO2 nanorod arrays. To further enhance the photovoltaic performance, anthracene-9-carboxylic acid was employed to modify the interface of TiO2/P3HT before P3HT was coated. Results revealed that the interface treatment significantly enhances the photovoltaic performance of the cell. The efficiency of the hybrid solar cells reaches 0.28% after interface modification, which is three times higher compared with the un-modified one. We find that except for the increased exciton dissociation efficiency recognized by the previous reports, the suppressing of electron back recombination is another important factor leading to the enhanced photovoltaic performance.
Using the oxidation method from vanadium metal thin films by magnetron sputtering, under the fixed annealing parameters of temperature（400 ℃） and oxygen pressure（103 Pa）, we fabricated a series of vanadium dioxide thin films through the change of annealing durations or substrates（quartz glass or AZOcovered glass）. Characterization of the thermochromic properties together with the X-ray diffraction（XRD） and field emission scanning electron microscopy（FE-SEM） indicates that appropriate annealing duration is a key factor to obtain pure VO2 films and AZO-covered glass is more suitable to obtain the VO2 films with high visible transmittance, good crystallinity and larger near-infrared switching efficiencies（maximum 34% at 2000 nm） compared with the substrate of quartz glass. However, VO2 films on quartz glass exhibit narrower loop（7 ℃） with smart reversible response to temperature. Depth profile XPS spectra further indicate that for the films fabricated on quartz glass from thicker V metal films, the existence of low valence vanadium oxides is inevitable and leads to a lower transmittance in the region of visible light.
GeS4 bulk glasses were prepared by the melt-quench technique and the samples were irradiated by 532-nm linearly polarized light. After the laser treatment, the photo-induced changes of the samples were investigated by UV-1601 speetrophotometer and optical second-order nonlinear tester. The results show that the transmittance of the samples around 532 nm obviously decreases and Bragg reflector forms, which is due to the production of photon-generated carriers. With the increase of laser pulse energy or the extension of irradiation duration, the Bragg reflector increases and gradually tends to be stable. These can be ascribed to the excitation- capture process of the carriers. After irradiation, the relaxation phenomenon results from the release of part of the absorbed energy in the glass matrix. And the fitting equation of the relaxation process is consistent with a conventional Kohlrausch stretched exponential function. The origin of the second harmonic generation （SHG） is because of the dipole reorientation caused by the photo-induced anisotropy in the glass.
