Electroluminescence peaking at 1.3 μm is observed from high concentration boron-diffused silicon p^+-njunctions.This emission is efficient at low temperature with a quantum efficiency 40 times higher thanthat of the band-to-band emission around 1.1 μm,but disappears at room temperature.The 1.3-μm bandpossibly originates from the dislocation networks lying near the junction region,which are introduced byhigh concentration boron diffusion.
