A novel Schottky body-contacted structure for partially depleted SOI nMOSFET's is presented.This structure can be realized by forming a shallow n +-p junction and two sidewall spacers in the source region,and then growing a thick silicide film,which can punch through the shallow junction and make a Schottky contact to the p-type silicon.Simulation results show that the anomalous subthreshold slope and kink effects are suppressed successfully and the drain breakdown voltage is improved considerably.This method has the same device area and is completely compatible with the bulk MOSFET process.
The barrier to the copper diffusion is one of the key technologies in copper metallization. A novel barrier has been presented, which is a thin film of silicon oxynitride formed by implanting nitrogen into PECVD silicon dioxide. The method proved highly effective to block the copper diffusion after high frequency C V measurements at different BTS (Bias Thermal Stress) conditions and the XPS (X ray Photoelectron Spectroscopy) analysis. Furthermore, this method has the advantage of simplifying the damascene process of copper metallization, which has also been analyzed and discussed in detail.
