Thin film light-emitting diodes with organic/inorganic heterostructure in which ZnO:Zn layer was used as electron transporting and hole blocking layer, PDDOPV, Poly(2,5- Didodecyloxy-1,4 Phenylenevinylene ) was used as hole transport and emission layer have been successfully prepared. Comparing to single layer device, the luminescent efficiency of bilayer device is improved about twenty-six times, the emission spectrum’s peak wavelength shifts to short wavelength, the half width at full maximum (HWFM) widens. The improvement of luminescent efficiency is due to the insertion of ZnO:Zn layer.
A diode with Tb(AcAc)3Phen as emitting layer and PPV,Vlq3 as hole and electron transportion layer,respectively,has been prepared.the spectrum of the diode shows a characteristic emission line of pure TB(3+).The recombination region of injected electrons and holes in the diode has been discussed.
